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              • 您現(xiàn)在的位置:買賣IC網(wǎng) > PDF目錄366489 > Am29LV200B-100EIB (Advanced Micro Devices, Inc.) 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory PDF資料下載
              參數(shù)資料
              型號: Am29LV200B-100EIB
              廠商: Advanced Micro Devices, Inc.
              元件分類: FLASH
              英文描述: 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
              中文描述: 2兆位(256Kx8Bit/128Kx16位),3.0伏的CMOS引導(dǎo)扇區(qū)閃存
              文件頁數(shù): 18/37頁
              文件大?。?/td> 478K
              代理商: AM29LV200B-100EIB
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              Am29LV200
              18
              P R E L IM IN A R Y
              The remaining scenario is that the system initially de-
              termines that the toggle bit is toggling and DQ5 has not
              gone high. The system may continue to monitor the
              toggle bit and DQ5 through successive read cycles, de-
              termining the status as described in the previous para-
              graph. Alternatively, it may choose to perform other
              system tasks. In this case, the system must start at the
              beginning of the algorithm when it returns to determine
              the status of the operation (top of Figure 5).
              DQ5: Exceeded Timing Limits
              DQ5 indicates whether the program or erase time has
              exceeded a specified internal pulse count limit. Under
              these conditions DQ5 produces a “1.” This is a failure
              condition that indicates the program or erase cycle was
              not successfully completed.
              The DQ5 failure condition may appear if the system
              tries to program a “1” to a location that is previously
              programmed to “0.”
              Only an erase operation can
              change a “0” back to a “1.”
              Under this condition, the
              device halts the operation, and when the operation has
              exceeded the timing limits, DQ5 produces a “1.”
              Under both these conditions, the system must issue
              the reset command to return the device to reading
              array data.
              DQ3: Sector Erase Timer
              After writing a sector erase command sequence, the
              system may read DQ3 to determine whether or not an
              erase operation has begun. (The sector erase timer
              does not apply to the chip erase command.) If addi-
              tional sectors are selected for erasure, the entire time-
              out also applies after each additional sector erase com-
              mand. When the time-out is complete, DQ3 switches
              from “0” to “1.” The system may ignore DQ3 if the sys-
              tem can guarantee that the time between additional
              sector erase commands will always be less than 50
              μ
              s. See also the “Sector Erase Command Sequence”
              section.
              After the sector erase command sequence is written,
              the system should read the status on DQ7 (Data# Poll-
              ing) or DQ6 (Toggle Bit I) to ensure the device has ac-
              cepted the command sequence, and then read DQ3. If
              DQ3 is “1”, the internally controlled erase cycle has be-
              gun; all further commands (other than Erase Suspend)
              are ignored until the erase operation is complete. If
              DQ3 is “0”, the device will accept additional sector
              erase commands. To ensure the command has been
              accepted, the system software should check the status
              of DQ3 prior to and following each subsequent sector
              erase command. If DQ3 is high on the second status
              check, the last command might not have been ac-
              cepted. Table 6 shows the outputs for DQ3.
              START
              No
              Yes
              Yes
              DQ5 = 1
              No
              Yes
              Toggle Bit
              = Toggle
              No
              Program/Erase
              Operation Not
              Complete, Write
              Reset Command
              Program/Erase
              Operation Complete
              Read DQ7–DQ0
              Toggle Bit
              = Toggle
              Read DQ7–DQ0
              Twice
              Read DQ7–DQ0
              Notes:
              1. Read toggle bit twice to determine whether or not it is
              toggling. See text.
              2. Recheck toggle bit because it may stop toggling as DQ5
              changes to “1” . See text.
              20513D-8
              Figure 5.
              Toggle Bit Algorithm
              (Notes
              1, 2)
              (Note 1)
              相關(guān)PDF資料
              PDF描述
              AM29LV200B-100FC 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
              Am29LV200B-100FCB 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
              AM29LV200B-100FE 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
              AM29LV200B-100FEB 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
              AM29LV200B-100FI 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
              相關(guān)代理商/技術(shù)參數(shù)
              參數(shù)描述
              AM29LV200BB-120EC 制造商:Advanced Micro Devices 功能描述:128K X 16 FLASH 3V PROM, 120 ns, PDSO48
              AM29LV200BB-90EC 制造商:Advanced Micro Devices 功能描述:NOR Flash, 128K x 16, 48 Pin, Plastic, TSSOP
              AM29LV200BB-90FC 制造商:Advanced Micro Devices 功能描述:2 Mb (128K x 16) Boot Sector, Flash Memory
              AM29LV256MH120RPGI 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 256MBIT 32MX8/16MX16 120NS 64BGA - Trays
              AM29LV256MH123RPGI 制造商:Advanced Micro Devices 功能描述:
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