參數(shù)資料
型號: Am29LV160BT80ECB
廠商: Advanced Micro Devices, Inc.
英文描述: INNOLINE: RP125-xxxxSB - Single Outputs up to 35A - Input/Output 1.6kVDC Isolation - Adjustable Output Voltage - No Minimum Load - Under -Voltage Lockout - Industry Standard Footprint - Fixed Operating Frequency - Halt Tested - Compact 36.83 x 57.91 x 12.7mm Package - High Effi
中文描述: 16兆位(2米× 8位/ 1個M x 16位),3.0伏的CMOS只引導扇區(qū)閃存
文件頁數(shù): 23/48頁
文件大小: 695K
代理商: AM29LV160BT80ECB
22
Am29LV160B
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the de-
vice has resumed erasing.
Notes:
1. See Table 9 for erase command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 4.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
21358G-8
相關PDF資料
PDF描述
AM29LV160BT80EE 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV160BT80EEB RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 05V; Power: 1W; Pot-Core Transformer - separated windings; High 5.2kVDC Isolation in compact size; Optional Continuous Short Circuit Protected; Pin Compatible with RH & RK Series; Approved for Medical Applications; UL and EN Safety Approvals; Efficiency to 82%
AM29LV160BT80EI 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Am29LV160BT80EIB 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV160BT80FC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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