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參數(shù)資料
| 型號： | AM29LV160BT120EE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | RP10 (E) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 10 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 86% |
| 中文描述： | 2M X 8 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁數(shù)： | 38/48頁 |
| 文件大?。?/td> | 695K |
| 代理商： | AM29LV160BT120EE |
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Am29LV160B
37
AC CHARACTERISTICS
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (
see “Write Operation Status”).
2. Illustration shows device in word mode.
Figure 18.
Chip/Sector Erase Operation Timings
OE#
CE#
Addresses
V
CC
WE#
Data
2AAh
SA
t
GHWL
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
21358G-22
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PDF描述 |
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| Am29LV160BT80ECB | INNOLINE: RP125-xxxxSB - Single Outputs up to 35A - Input/Output 1.6kVDC Isolation - Adjustable Output Voltage - No Minimum Load - Under -Voltage Lockout - Industry Standard Footprint - Fixed Operating Frequency - Halt Tested - Compact 36.83 x 57.91 x 12.7mm Package - High Effi |
| AM29LV160BT80EE | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV160BT-120EI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3V/3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP Tray |
| AM29LV160BT80SC | 制造商:AMD 功能描述:* |
| AM29LV160BT-90EC | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP |
| AM29LV160BT-90FC | 制造商:Advanced Micro Devices 功能描述: 制造商:Advanced Micro Devices 功能描述:1M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| AM29LV160DB120EI | 制造商:Advanced Micro Devices 功能描述: |
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