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參數(shù)資料
| 型號： | AM29LV128MH103FI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | REVERSE, MO-142B, TSOP-56 |
| 文件頁數(shù)： | 61/65頁 |
| 文件大?。?/td> | 1222K |
| 代理商： | AM29LV128MH103FI |
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September 9, 2003
Am29LV128MH/L
59
D A T A S H E E T
PHYSICAL DIMENSIONS
TS056/TSR056—56-Pin Standard/Reverse Thin Small Outline Package (TSOP)
NOTES:
1
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982.)
2
PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
3
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK.
4
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS
DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE
LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
5
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE
MOLD PROTUSION IS 0.15 mm PER SIDE.
6
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE
DAMBAR PROTUSION SHALL BE 0.08 mm TOTAL IN EXCESS OF b
DIMENSION AT MAX MATERIAL CONDITION. MINIMUM SPACE BETWEEN
PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 mm.
7
THESE DIMESIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
0.10 mm AND 0.25 mm FROM THE LEAD TIP.
8.
LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
SEATING PLANE.
9
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
3160\38.10A
MO-142 (B) EC
NOM.
---
---
1.00
0.20
0.22
---
---
TS/TSR 56
1.20
0.15
1.05
0.23
0.27
0.16
0.21
MAX.
---
0.05
MIN.
0.95
0.17
0.17
0.10
0.10
20.00
18.40
20.20
18.50
19.90
18.30
14.00
14.10
13.90
0.60
3
---
56
0.70
5
0.20
0.50
0
0.08
0.50 BASIC
E
e
L
R
N
b1
b
JEDEC
SYMBOL
A
A1
PACKAGE
A2
D1
D
c1
c
O
相關PDF資料 |
PDF描述 |
|---|---|
| AM29LV128MH103PCI | 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV128MH113EI | 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV128MH113FI | 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV128MH113PCI | 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| AM29LV128MH123EI | 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV128MH103REI | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 56-Pin TSOP |
| AM29LV128MH113REI | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 110ns 56-Pin TSOP |
| AM29LV128MH113RFI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays |
| AM29LV128MH113RPCI | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA |
| AM29LV128MH123REI | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 120ns 56-Pin TSOP |
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