參數(shù)資料
型號： AM29LV128MH103EI
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述： 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝： MO-142B, TSOP-56
文件頁數(shù)： 59/65頁
文件大?。?/td> 1222K
代理商： AM29LV128MH103EI
September 9, 2003
Am29LV128MH/L
57
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
. Programming specifications assume that
all bits are programmed to 00h.
2. Maximum values are measured at VCC = 3.0, worst case temperature. Maximum values are valid up to and including 100,000
program/erase cycles.
3. Byte/Word programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
6. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words
program faster than the maximum program times listed.
7. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
8. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
11 for further information on command definitions.
9. The device has a minimum erase and program cycle endurance of 100,000 cycles.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming
prior to erasure (Note 6)
Chip Erase Time
128
256
sec
Single Byte/Word
Program Time (Note 3)
Byte
60
600
μs
Excludes system level
overhead (Note 8)
Word
60
600
μs
Accelerated Single Byte/Word
Program Time
(Note 3)
Byte
54
540
μs
Word
54
540
μs
Total Write Buffer Program
Time (Note 4)
240
1200
μs
Effective Write Buffer Program
Time (Note 5)
Per Byte
7.5
38
μs
Per Word
15
75
μs
Total Accelerated Write Buffer
Program Time (Note 4)
200
1040
μs
Effective Accelerated Write
Buffer Program Time
(Note 5)
Per Byte
6.25
33
μs
Per Word
12.5
65
μs
Chip Program Time
126
292
sec
相關PDF資料
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AM29LV128MH93FI 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
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