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參數(shù)資料
| 型號： | AM29LV116DT-70EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 2M X 8 FLASH 3V PROM, 70 ns, PDSO40 |
| 封裝： | MO-142CD, TSOP-40 |
| 文件頁數(shù)： | 43/44頁 |
| 文件大?。?/td> | 863K |
| 代理商： | AM29LV116DT-70EC |
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42
Am29LV116D
REVISION SUMMARY
Revision A (October 1997)
First release.
Revision B (October 1997)
Global
Deleted SO package from data sheet.
Revision C (December 1997)
Alternate CE# Controlled Erase/Program
Operations
Changed t
CP
from 45 to 35 ns on 80R and 90 speed
options.
Revision C+1 (January 1998)
Global
Changed data sheet status to Preliminary.
Reset Command
Deleted the last paragraph in this section.
Revision C+2 (March 1998)
Figure 2, In-System Sector Protect/Unprotect
Algorithms (0.35 μm devices)
In the sector protect algorithm, added a “Reset
PLSCNT=1” box in the path from “Protect another sec-
tor” back to setting up the next sector address.
AC Characteristics
Erase/Program Operations; Alternate CE# Controlled
Erase/Program Operations:
Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Corrected the note reference for t
VCS
.
This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Figure 21, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million
cycles.
Revision C+3 (August 1998)
Global
Added 70R speed option, changed 80R speed option
to 80.
Distinctive Characteristics
Changed process technology to 0.32 μm.
Table 9, Command Definitions
The CFI Query command is now included in the table.
DC Characteristics
Moved V
CC
max test condition for I
CC
specifications to
notes.
Figure 21, Sector Protect/Unprotect Timing
Diagram
Changed timing specifications in diagram to match
those in the figure of In-System Sector Protect/Unpro-
tect Algorithms.
Revision D (January 1999)
Distinctive Characteristics
Added “20-year data retention at 125
°
C” bullet.
Revision E (February 2, 2000)
Global
The process technology has changed to 0.23 μm, and
is indicated in the part number by the “D” suffix. The 70
ns speed option is now offered in the full voltage range
instead of the regulated voltage range. The 70 ns
devices are also now available in the industrial temper-
ature range. The extended temperature range is no
longer available. The 80 ns speed option has been
deleted. All other parameters and functions remain
unchanged.
AC Characteristics—Figure 15. Program
Operations Timing and Figure 16. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E+1 (November 7, 2000)
Global
Added table of contents. Deleted burn-in option in
ordering information section.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV116DT-70EI | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV116DT-70FC | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV116DT-70FI | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LVI16D | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV116DB-70FI | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV116DT-90EI | 制造商:Rochester Electronics LLC 功能描述: 制造商:Advanced Micro Devices 功能描述: |
| AM29LV128MH103REI | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 56-Pin TSOP |
| AM29LV128MH113REI | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 128Mbit 16M/8M x 8bit/16bit 110ns 56-Pin TSOP |
| AM29LV128MH113RFI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 56TSOP - Trays |
| AM29LV128MH113RPCI | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA |
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