- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366459 > AM29LV017D-70FI (ADVANCED MICRO DEVICES INC) 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | AM29LV017D-70FI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| 中文描述： | 2M X 8 FLASH 3V PROM, 70 ns, PDSO40 |
| 封裝： | REVERSE, MO-142CD, TSOP-40 |
| 文件頁數(shù)： | 14/45頁 |
| 文件大?。?/td> | 955K |
| 代理商： | AM29LV017D-70FI |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁當(dāng)前第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁
Am29LV017D
13
Figure 2.
Temporary Sector Unprotect Operation
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 8 for com-
mand definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during V
CC
power-up and
power-down transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not ac-
cept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE#
= V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cy-
cle, CE# and WE# must be a logical zero while OE#
is a logical one.
Power-Up Write Inhibit
If WE# = CE# = V
and OE# = V
IH
during power
up, the device does not accept commands on the
rising edge of WE#. The internal state machine is
automatically reset to reading array data on
power-up.
START
Perform Erase or
Program Operations
RESET# = V
IH
Temporary Sector
Unprotect Completed
(Note 2)
RESET# = V
ID
(Note 1)
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29LV017D-70WCC | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| AM29LV017D-70WCI | 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory |
| Am29LV020BB-55RECB | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory |
| Am29LV020BT-55RPEB | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory |
| Am29LV020BB-55RPEB | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| am29lv017d-70wcc | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV017D-90EC | 制造商:ADV-MICRO-DEV 功能描述: |
| AM29LV017D-90WCC | 制造商:Advanced Micro Devices 功能描述:2M X 8 FLASH 3V PROM, 90 ns, PBGA48 |
| AM29LV017D-90WCC-T | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV033C-120EI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3.3V 32M-Bit 4M x 8 120ns 40-Pin TSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。