參數(shù)資料
型號: AM29LV017B-90FI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
中文描述: 2M X 8 FLASH 3V PROM, 90 ns, PDSO40
封裝: REVERSE, TSOP-40
文件頁數(shù): 14/39頁
文件大?。?/td> 510K
代理商: AM29LV017B-90FI
Am29LV017B
14
P R E L IM IN A R Y
Table 6.
Device Geometry Definition
Addresses
Data
Description
27h
15h
Device Size = 2
N
byte
28h
29h
00h
00h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
00h
00h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
01h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
1Fh
00h
00h
01h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
00h
00h
00h
00h
Erase Block Region 2 Information
35h
36h
37h
38h
00h
00h
80h
00h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
00h
00h
00h
00h
Erase Block Region 4 Information
Table 7.
Primary Vendor-Specific Extended Query
Addresses
Data
Description
40h
41h
42h
50h
52h
49h
Query-unique ASCII string “PRI”
43h
31h
Major version number, ASCII
44h
30h
Minor version number, ASCII
45h
01h
Address Sensitive Unlock
0 = Required, 1 = Not Required
46h
02h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
01h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
01h
Sector Temporary Unprotect: 00 = Not Supported, 01 = Supported
49h
04h
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
4Ah
00h
Simultaneous Operation: 00 = Not Supported, 01 = Supported
4Bh
00h
Burst Mode Type: 00 = Not Supported, 01 = Supported
4Ch
00h
Page Mode Type: 00 = Not Supported, 01 = 4 Word Page,
02 = 8 Word Page
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