參數(shù)資料
型號(hào): Am29LV017B-120WCIB
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
中文描述: 16兆位(2米× 8位)的CMOS 3.0伏特,只有統(tǒng)一部門閃存
文件頁數(shù): 33/39頁
文件大小: 510K
代理商: AM29LV017B-120WCIB
33
Am29LV017B
P R E L IM IN A R Y
AC CHARACTERISTICS
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
RESET#
t
VIDR
12 V
0 or 3 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
21415C-23
Figure 20.
Temporary Sector Unprotect Timing Diagram
Sector Protect: 100 μs
Sector Unprotect: 10 ms
1 μs
RESET#
SA, A6,
A1, A0
Data
CE#
WE#
OE#
60h
60h
40h
Valid*
Valid*
Valid*
Status
Sector Protect/Unprotect
Verify
V
ID
V
IH
Note:
For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
21415C-24
Figure 21.
Sector Protect/Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
Am29LV017B-80RWCEB 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
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Am29LV017B-120WCEB 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
Am29LV017B-80RWCCB 16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
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