參數(shù)資料
型號(hào): Am29LV002T-90RFEB
廠商: Advanced Micro Devices, Inc.
英文描述: 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 2兆位(256畝× 8位),3.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 19/34頁(yè)
文件大?。?/td> 448K
代理商: AM29LV002T-90RFEB
Am29LV002
19
P R E L I M I N A R Y
Table 6.
Write Operation Status
Notes:
1.
DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
Operation
Embedded Program Algorithm
Embedded Erase Algorithm
Reading within Erase
Suspended Sector
Reading within Non-Erase
Suspended Sector
Erase-Suspend-Program
DQ7
(Note 2)
DQ7#
0
DQ6
Toggle
Toggle
DQ5
(Note 1)
0
0
DQ3
N/A
1
DQ2
(Note 2)
No toggle
Toggle
RY/BY#
0
0
Standard
Mode
Erase
Suspend
Mode
1
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
相關(guān)PDF資料
PDF描述
Am29LV002B-90RFEB 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV002B-120FEB Ceramic Conformally Coated / Radial 'Standard & High Voltage Golden Max'; Capacitance [nom]: 18pF; Working Voltage (Vdc)[max]: 1000V; Capacitance Tolerance: +/-5%; Dielectric: Multilayer Ceramic, Conformally Coated; Temperature Coefficient: C0G (NP0); Lead Style: Radial Leaded; Lead Dimensions: 0.100" Lead Spacing; Body Dimensions: 0.150" x 0.210" x 0.130"; Container: Bag; Qty per Container: 500
AM29LV002T-120FE 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
Am29LV002T-90RECB 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV002B-100EC 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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