參數(shù)資料
型號: Am29LV002T-120EIB
廠商: Advanced Micro Devices, Inc.
英文描述: 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 2兆位(256畝× 8位),3.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁數(shù): 31/34頁
文件大?。?/td> 448K
代理商: AM29LV002T-120EIB
Am29LV002
31
P R E L I M I N A R Y
AC CHARACTERISTICS
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
A0 for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
t
BUSY
Note:
PA = program address, PD = program data, DQ7# = complement of the data written to the device, D
OUT
= data written to
the device. Figure indicates the last two bus cycles of the command sequence
21191C-22
Figure 20.
Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料
PDF描述
AM29LV002T-120FC 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
Am29LV002T-120FCB MB 4C 4#12 PIN RECP
AM29LV002B-120FC 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
Am29LV002B-120FCB 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV002B-120FE 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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