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參數(shù)資料
| 型號： | AM29LV002BB-120EF |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 2兆位（256畝× 8位）的CMOS 3.0伏，只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 40/41頁 |
| 文件大?。?/td> | 416K |
| 代理商： | AM29LV002BB-120EF |
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38
Am29LV002B
21520D5 October11,2006
D AT A S H E E T
REVISION SUMMARY
Revision A (January 1998)
Released initial, abbreviated version.
Revision B (June 1998)
Expanded data sheet from Advanced Information to
Preliminary version.
Distinctive Characteristics
Changed “Manufactured on 0.35 μm process technology”
to “Manufactured on 0.32 μm process technology”.
General Description
Second paragraph:
Changed “This device is manufac-
tured using AMD’s 0.35 μm process technology” to
“This device is manufactured using AMD’s 0.32 μm
process technology”
Revision B+1 (August 1998)
Global
Added the -55R speed option; deleted the -80 speed
option.
DC Characteristics
Added the note on maximum I
CC
specifications to
table.
AC Characteristics
Alternate CE# Controlled Erase/Progran Operations:
Corrected the -90 t
CP
specification.
Revision C (January 1999)
Distinctive Characteristics
Added bullet for 20-year data retention at 125
°
C
AC Characteristics—Erase/Program Operations
t
DVWH
: Changed the -55R speed option to 35 ns from
20 ns.
t
WLWH
: Changed the -55R speed option to 35 ns from
30 ns.
AC Characteristics—Alternate CE# Controlled
Erase/Program Operations
t
DVEH
: Changed the -55R speed option to 35 ns from 20
ns.
TSOP Pin Capacitance
Changed from “TSOP and SO Pin Capacitance”.
Revision D (November 18, 1999)
AC Characteristics—Figure 15. Program
Operations Timing and Figure 16. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision D+1 (November 13, 2000)
Added table of contents. Deleted burn-in option from
Ordering Information section.
Revision D+2 (June 14, 2004)
Added Pb-free package OPNs.
Revision D+3 (January 5, 2006)
Removed all Reverse TSOP options.
Revision D+4 (September 12, 2006)
Erase and Program Operations table
Changed t
BUSY
to a maximum specification.
Revision D5 (October 11, 2006)
Global
Added notice on product availability.
相關PDF資料 |
PDF描述 |
|---|---|
| Am29LV004BB-70RECB | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV004BT-70REC | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV004BB-70REC | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV004BT-120FCB | 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| Am29LV004BT-120FEB | SWTCH KYLCK LOWPRO SPST 1A 90DEG |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV002BB-90EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV002BT-90EF | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 2Mbit 256K x 8bit 90ns 40-Pin TSOP |
| AM29LV002BT-90EI\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 2MBIT 256KX8 90NS 40TSOP - Tape and Reel |
| AM29LV002BT-90EI\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 2MBIT 256KX8 90NS 40TSOP - Tape and Reel |
| AM29LV002T-120EC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3V/3.3V 2M-Bit 256K x 8 120ns 40-Pin TSOP |
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