參數(shù)資料
型號: Am29LV002B-100ECB
廠商: Advanced Micro Devices, Inc.
英文描述: 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
中文描述: 2兆位(256畝× 8位),3.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁數(shù): 29/34頁
文件大小: 448K
代理商: AM29LV002B-100ECB
Am29LV002
29
P R E L I M I N A R Y
AC CHARACTERISTICS
Temporary Sector Unprotect
Note:
Not 100% tested.
Note:
The system can use OE# or CE# to toggle DQ2/DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
21191C-20
Figure 18.
DQ2 vs. DQ6
Enter
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Embedded
Erasing
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
RESET#
t
VIDR
12 V
0 or 3 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 or 3 V
21191C-21
Figure 19.
Temporary Sector Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
Am29LV002B-100EE 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
Am29LV002B-100EEB 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV002B-100EI 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
Am29LV002B-100EIB 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
AM29LV002B-100FC 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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