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參數(shù)資料
| 型號： | AM29LL800BT-200EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory |
| 中文描述： | 1M X 8 FLASH 2.2V PROM, 200 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁數(shù)： | 40/40頁 |
| 文件大?。?/td> | 534K |
| 代理商： | AM29LL800BT-200EC |
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Am29LL800B
A D V A N C E I N F O R M A T I O N
REVISION SUMMARY FOR AM29LL800B
Revision A+1
Distinctive Characteristics
Ultra low power consumption bullet: The typical Auto-
matic Sleep Mode and standby mode currents are both
75 nA.
DC Characteristics, CMOS Compatible
The typical current for I
CC3
, I
CC4
, and I
CC5
is 75 nA.
Revision A+2
Reset Command
Deleted last paragraph in section, which applied to RE-
SET#, not the reset command.
Revision A+3
Figure 2, In-System Sector Protect/Unprotect
Algorithms
In the sector protect algorithm, added a “PLSCNT=1”
box in the path from “Protect another sector” back to
setting up the next sector address.
DC Characteristics
Changed Note 1 to indicate that OE# is at V
IH
for the
listed current.
Erase and Program Operations; Alternate CE#
Controlled Erase/Program Operations
Corrected the notes reference for t
WHWH1
and t
WHWH2
.
These parameters are 100% tested. Corrected the
note reference for t
VCS
. This parameter is not 100%
tested. Removed t
OEH
parameters from CE# Con-
trolled Erase/Program Operations table for consistency
with other data sheets.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Figure 23, Temporary Sector Unprotect Timing
Diagram
Changed the high voltage (V
ID
) on the RESET# wave-
form to 10 V.
Figure 24, Sector Protect/Unprotect Timing
Diagram
A valid address is not required for the first write cycle;
only the data 60h.
Erase and Programming Performance
In Note 2, the worst case endurance is now 1 million cy-
cles.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料 |
PDF描述 |
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| AM29LL800B | DSUB 13C3 FLOA DI |
| AM29LL800BB-150EC | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory |
| Am29LL800BB-150ECB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory |
| AM29LL800BB-150EI | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory |
| Am29LL800BB-150EIB | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 2.2 Volt-only Boot Sector Flash Memory |
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