參數(shù)資料
    型號(hào): AM29F800BT-120WBK
    廠商: Advanced Micro Devices, Inc.
    英文描述: 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
    中文描述: 8兆位(1 M中的x 8-Bit/512畝x 16位),5.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
    文件頁(yè)數(shù): 3/44頁(yè)
    文件大?。?/td> 702K
    代理商: AM29F800BT-120WBK
    DATA SHEET
    This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
    Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
    Publication#
    21504
    Issue Date:
    November 2, 2006
    Rev:
    E
    Amendment:
    5
    Am29F800B
    8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
    CMOS 5.0 Volt-only, Boot Sector Flash Memory
    DISTINCTIVE CHARACTERISTICS
    Single power supply operation
    — 5.0 Volt-only operation for read, erase, and
    program operations
    — Minimizes system level requirements
    Manufactured on 0.32 μm process technology
    — Compatible with 0.5 μm Am29F800 device
    High performance
    — Access times as fast as 55 ns
    Low power consumption (typical values at
    5 MHz)
    — 1 μA standby mode current
    — 20 mA read current (byte mode)
    — 28 mA read current (word mode)
    — 30 mA program/erase current
    Flexible sector architecture
    — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
    fifteen 64 Kbyte sectors (byte mode)
    — One 8 Kword, two 4 Kword, one 16 Kword, and
    fifteen 32 Kword sectors (word mode)
    — Supports full chip erase
    — Sector Protection features:
    A hardware method of locking a sector to
    prevent any program or erase operations within
    that sector
    — Sectors can be locked via programming
    equipment
    Temporary Sector Unprotect feature allows code
    changes in previously locked sectors
    Top or bottom boot block configurations
    available
    Embedded Algorithms
    — Embedded Erase algorithm automatically
    preprograms and erases the entire chip or any
    combination of designated sectors
    — Embedded Program algorithm automatically
    writes and verifies data at specified addresses
    Minimum 1,000,000 program/erase cycles per
    sector guaranteed
    20-year data retention at 125
    °
    C
    — Reliable operation for the life of the system
    Package option
    — 48-pin TSOP
    — 44-pin SO
    — 48-ball FBGA
    — Known Good Die (KGD)
    (see publication number 21631)
    Compatibility with JEDEC standards
    — Pinout and software compatible with single-
    power-supply Flash
    — Superior inadvertent write protection
    Data# Polling and toggle bits
    — Provides a software method of detecting
    program or erase operation completion
    Ready/Busy# pin (RY/BY#)
    — Provides a hardware method of detecting
    program or erase cycle completion
    Erase Suspend/Erase Resume
    — Suspends an erase operation to read data from,
    or program data to, a sector that is not being
    erased, then resumes the erase operation
    Hardware reset pin (RESET#)
    — Hardware method to reset the device to reading
    array data
    相關(guān)PDF資料
    PDF描述
    AM29F800BT-55ED 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
    AM29F800BT-55EE 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
    AM29F800BT-55EF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
    AM29F800BT-70WBD 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
    AM29F800BT-70WBF 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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