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| 型號(hào)： | AM29F800BT-120EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory |
| 中文描述： | 512K X 16 FLASH 5V PROM, 120 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁(yè)數(shù)： | 38/39頁(yè) |
| 文件大小： | 518K |
| 代理商： | AM29F800BT-120EC |
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38
Am29F800B
P R E L I M I N A R Y
REVISION SUMMARY FOR AM29F800B
Revision B
Global
Added -55 speed option. Changed data sheet designa-
tion from Advance Information to Preliminary.
Sector Protection/Unprotection
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 μs
after a program command sequence if the sector spec-
ified is protected.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
Corrected sector erase timeout to 50 μs.
Erase Suspend Command
Changed to indicate that the device suspends the
erase operation a maximum of 20 μs after the rising
edge of WE#.
DC Characteristics
Changed to indicate V
ID
min and max values are 11.5
to 12.5 V, with a V
CC
test condition of 5.0 V. Added
typical values to TTL table. Revised CMOS typical
standby current (I
CC3
).
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Corrected hexadecimal values in address and data
waveforms. In Figure 19, corrected data values for chip
and sector erase.
Erase and Programming Performance
Corrected word and chip programming times.
Revision C
Global
Formatted for consistency with other 5.0 volt-only data
sheets.
Revision C+1
Distinctive Characteristics
Changed typical program/erase current to 30 mA to
match the CMOS DC Characteristics table.
Changed minimum endurance to 1 million write cycles
per sector guaranteed.
AC Characteristics
Erase/Program Operations:
Corrected the notes refer-
ence for t
WHWH1
and t
WHWH2
. These parameters are
100% tested. Changed t
DS
and t
CP
specifications for 55
ns device. Changed t
WHWH1
word mode specification
to 12 μs.
Alternate CE# Controlled Erase/Program Operations:
Corrected the notes reference for t
WHWH1
and t
WHWH2
.
These parameters are 100% tested. Changed t
DS
and
t
CP
specifications for 55 ns device. Changed t
WHWH1
word mode specification to 12 μs.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Erase and Programming Performance
In Notes 1 and 6, changed the endurance specification
to 1 million cycles.
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