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參數資料
| 型號： | AM29F800B-90 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 8兆位（1,048,576 x 8-Bit/524，288 x 16位），5.0伏的CMOS只，扇區(qū)擦除閃存 |
| 文件頁數： | 13/41頁 |
| 文件大?。?/td> | 267K |
| 代理商： | AM29F800B-90 |
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8/18/97
Am29F800T/Am29F800B
13
P R E L I M I N A R Y
Table 7.
Am29F800 Command Definitions
Legend:
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE or CE pulse.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE or CE pulse.
SA = Address of the sector to be erased. Address bits A18–A12 uniquely select any sector.
Notes:
1. All values are in hexadecimal.
2. See Tables 1 and 2 for description of bus operations.
3. The data is 00H for an unprotected sector group and 01H for a protected sector group. The complete bus address is
composed of the sector address (A18–A12), A1 = 1, and A0 = 0.
4. Read and program functions in non-erasing sectors are allowed in the Erase Suspend mode.
5. Address bits A18–A11 are don’t care for unlock and command cycles.
Command
Sequence
Read/Reset
(Note 2)
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Second Bus
Read/Write
Cycle
Third Bus Write
Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Reset/Read
Word
1
XXX
XXF0
RA
RD
Byte
F0
Autoselect
Manufacturer ID
Word
3
555
XXAA
2AA
XX55
555
XX90
XX00
XX01
Byte
AAA
AA
555
55
AAA
90
00
01
Autoselect
Device ID
(Top Boot Block)
Word
3
555
XXAA
2AA
XX55
555
XX90
XX01
22D6
Byte
AAA
AA
555
55
AAA
90
02
D6
Autoselect
Device ID
(Bottom Boot
Block)
Word
3
555
XXAA
2AA
XX55
555
XX90
XX01
2258
Byte
AAA
AA
555
55
AAA
90
02
58
Autoselect
Sector Protect
Verify (Note 3)
Word
3
555
XXAA
2AA
XX55
555
XX90
(SA)
X02
XX00
XX01
Byte
AAA
AA
555
55
AAA
90
(SA)
X04
00
01
Byte Program
Word
4
555
XXAA
2AA
XX55
555
XXA0
PA
PD
Byte
AAA
AA
555
55
AAA
A0
Chip Erase
Word
6
555
XXAA
2AA
XX55
555
XX80
555
XXAA
2AA
XX55
555
XX10
Byte
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
Word
6
555
XXAA
2AA
XX55
555
XX80
555
XXAA
2AA
XX55
SA
XX30
Byte
AAA
AA
555
55
AAA
80
AAA
AA
555
55
30
Erase Suspend
(Note 4)
Word
1
XXX
XXB0
Byte
B0
Erase Resume
Word
1
XXX
XX30
Byte
30
相關PDF資料 |
PDF描述 |
|---|---|
| AM29F800B-90EC | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-90ECB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-90EE | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-90EEB | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F800B-90EI | 8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
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| AM29F800BB-120DPC1 | 制造商:Spansion 功能描述:5V 8M FLASH KNOWN GOOD DIE W/BOTTOM BOOT (COMMERCIAL TEMP) - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F800BB120SC | 制造商:Advanced Micro Devices 功能描述: |
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| AM29F800BB-55EF | 功能描述:閃存 8M (1MX8/512KX16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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