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參數(shù)資料
| 型號： | AM29F400BT-90DTI2 |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 2 |
| 中文描述： | 256K X 16 FLASH 5V PROM, 90 ns, UUC43 |
| 封裝： | SURF TAPE PACKAGE-43 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 126K |
| 代理商： | AM29F400BT-90DTI2 |
8
Am29F400B Known Good Die
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
Die Dimensions . . . . . . . . . . . . . . 135 mils x 198 mils
. . . . . . . . . . . . . . . . . . . . . . . . . . .3.42 mm x 5.02 mm
Die Thickness. . . . . . . . . . . . . . . . .
~500 μm/~20 mils
Bond Pad Size . . . . . . . . . . . . . . 4.69 mils x 4.69 mils
. . . . . . . . . . . . . . . . . . . . . . . . . .115.9 μm x 115.9 μm
Pad Area Free of Passivation . . . . . . . . . 13.98 mils
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9,025 μm
2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
Bond Pad Metallization . . . . . . . . . . . . . . . . . . . Al/Cu
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
. . . . . . . . . . . . . . . . . . . . may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . . . . . SiN/SOG/SiN
DC OPERATING CONDITIONS
V
CC
(Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V
Junction Temperature Under Bias . .T
J
(max) = 130
°
C
Operating Temperature
Commercial . . . . . . . . . . . . . . . . . . . 0
°
C to +70
°
C
Industrial . . . . . . . . . . . . . . . . . . . –40
°
C to +85
°
C
Extended . . . . . . . . . . . . . . . . . . –55
°
C to +125
°
C
Contact AMD for higher temperature range devices.
MANUFACTURING INFORMATION
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . .FASL
Test . . . . . . . . . . . . . . . . . . . . . . Sunnyvale, CA, USA,
. . . . . . . . . . . . . . . . . . . . . . . . .and Penang, Malaysia
Manufacturing ID (Top Boot) . . . . . . . . . . . .98F02AK
(Bottom Boot) . . . . . . . 98F02ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250
°
C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30
°
C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F400BT-90DWC2 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 2 |
| AM29F400BT-90DWE2 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 2 |
| AM29F400BT-90DWI2 | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 2 |
| Am29F400BT-90EC | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F400BT-90ECB | 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F400BT-90EC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 90ns 48-Pin TSOP |
| AM29F400BT-90ED | 制造商:Spansion 功能描述:FLASH TOP BLOCK 4MB SMD 29F400 |
| AM29F400BT-90EF | 功能描述:閃存 4M (512KX8/256Kx16) Parallel NOR Fl 5V RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F400BT-90EI\T | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 4M-Bit 512K x 8/256K x 16 90ns 48-Pin TSOP T/R |
| AM29F400BT-90SE\T | 制造商:Spansion 功能描述:4 MEGABIT (512 K X 8-BIT/256 K X 16-BIT) CMOS 5.0 VOLT-ONLY BOOT SECTOR FLASH MEMORY |
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