參數(shù)資料
型號(hào): Am29F400BT-55EIB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),5.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù): 21/37頁(yè)
文件大?。?/td> 515K
代理商: AM29F400BT-55EIB
Am29F400B
21
P R E L I M I N A R Y
DC CHARACTERISTICS
TTL/NMOS Compatible
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Erase or Embedded Program is in progress.
3. Not 100% tested.
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9, OE#, RESET# Input Load
Current
V
CC
= V
CC max
;
A9, OE#, RESET# = 12.5 V
50
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Note 1)
CE# = V
IL,
OE#
=
V
IH,
V
CC
= V
CC max
,
f
= 5 MHz, Byte Mode
19
40
mA
CE# = V
IL,
OE#
=
V
IH,
V
CC
= V
CC max
,
f
= 5 MHz, Word Mode
19
50
mA
I
CC2
V
CC
Active Write Current
(Notes 2, 3)
CE# = V
IL,
OE#
=
V
IH
, V
CC
= V
CC max
36
60
mA
I
CC3
V
CC
Standby Current
CE#, RESET#, and OE# = V
IH
,
V
CC
= V
CC max
0.4
1
mA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+0.5
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 5.8 mA, V
CC
= V
CC min
0.45
V
V
OH
Output High Voltage
I
OH
= –2.5 mA, V
CC
= V
CC min
2.4
V
V
LKO
Low V
CC
Lock-Out Voltage
3.2
4.2
V
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