參數(shù)資料
型號: Am29F400BB-55FEB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),5.0伏的CMOS只引導扇區(qū)閃存
文件頁數(shù): 31/37頁
文件大?。?/td> 515K
代理商: AM29F400BB-55FEB
Am29F400B
31
P R E L I M I N A R Y
AC CHARACTERISTICS
Enter
Embedded
Erasing
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
Note:
The system may use either CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
21505C-21
Figure 17.
DQ2 vs. DQ6
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
RESET#
t
VIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 or 5 V
21505C-22
Figure 18.
Temporary Sector Unprotect Timing Diagram
相關PDF資料
PDF描述
Am29F400BT-55FIB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Am29F400BB-55FIB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
AM29F400BT-75DWI2 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 2
AM29F400BT-90DGC2 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 2
AM29F400BT-90DGE2 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 2
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