參數(shù)資料
型號: Am29F400BB-55EIB
廠商: Advanced Micro Devices, Inc.
英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
中文描述: 4兆位(512畝x 8-Bit/256畝x 16位),5.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁數(shù): 24/37頁
文件大?。?/td> 515K
代理商: AM29F400BB-55EIB
24
Am29F400B
P R E L IM IN A R Y
AC CHARACTERISTICS
Read Operations
Notes:
1. Not 100% tested.
2. See Figure 8 and Table 7 for test specifications.
Parameter
Description
Speed Option
JEDEC
Std
Test Setup
-55
-60
-70
-90
-120
-150
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
55
60
70
90
120
150
ns
t
AVQV
t
ACC
Address to Output Delay
CE# = V
IL
OE# = V
IL
Max
55
60
70
90
120
150
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE# = V
IL
Max
55
60
70
90
120
150
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max
30
30
30
35
50
55
ns
t
EHQZ
t
DF
Chip Enable to Output High Z
(Note 1)
Max
15
20
20
20
30
35
ns
t
GHQZ
t
DF
Output Enable to Output High Z
(Note 1)
Max
15
20
20
20
30
35
ns
t
OEH
Output Enable
Hold Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
AXQX
t
OH
Output Hold Time From
Addresses, CE# or OE#,
Whichever Occurs First (Note 1)
Min
0
ns
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
ACC
t
RC
t
OEH
t
OE
0 V
RY/BY#
RESET#
t
DF
t
OH
21505C-13
Figure 9.
Read Operations Timings
相關(guān)PDF資料
PDF描述
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