參數(shù)資料
型號: AM29F200BB-45
廠商: Advanced Micro Devices, Inc.
英文描述: 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
中文描述: 2兆位(256畝x 8-Bit/128畝x 16位),5.0伏的CMOS只,引導(dǎo)扇區(qū)閃存
文件頁數(shù): 23/39頁
文件大小: 519K
代理商: AM29F200BB-45
Am29F200B
23
DC CHARACTERISTICS (Continued)
CMOS Compatible
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CCmax
.
3. I
CC
active while Embedded Program or Erase Algorithm is in progress.
4. Not 100% tested.
5. I
CC3
for extended temperature is 20
μA max (>+85
°
C)
.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
, V
CC
= V
CC
Max
±
1.0
μA
I
LIT
A9, OE
#
, RESET
#
Input
Load Current
V
CC
= V
CC
Max;
A9, OE
#
, RESET
#
= 12.5 V
50
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to V
CC
, V
CC
= V
CC
Max
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Notes 1, 2)
CE
#
= V
IL
, OE
#
= V
IH
Byte
20
40
mA
Word
28
50
I
CC2
V
CC
Active Program/Erase
Current (Notes 2, 3, 4)
CE
#
= V
IL
, OE
#
= V
IH
30
50
mA
I
CC3
V
CC
Standby Current
Note (Note 5)
CE
#
= V
CC
± 0.5 V, OE
#
= V
IH
1
5
μA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7 x V
CC
V
CC
+ 0.3
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 5.0 V
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 5.8 mA, V
CC
= V
CC
Min
0.45
V
V
OH1
Output Low Voltage
I
OH
= –2.5 mA, V
CC
= V
CC
Min
0.85 V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC
Min
V
CC
– 0.4
V
V
LKO
Low V
CC
Lock-Out Voltage
3.2
4.2
V
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AM29F200BB-45SI 制造商:Advanced Micro Devices 功能描述:
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AM29F200BB-55EF\T 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 55ns 48-Pin TSOP T/R
AM29F200BB-70EC 制造商:Spansion 功能描述:IC, FLASH MEM, 2MBIT, 70NS, 48-TSOP, Memory Type:Flash - NOR, Memory Size:2Mbit,
AM29F200BB-70ED 制造商:Spansion 功能描述:IC 2MEG FLSH 256KX16 BOTTOM SE 制造商:Spansion 功能描述:IC, FLASH MEM, 2MBIT, 70NS, 48-TSOP, Memory Type:Flash - NOR, Memory Size:2Mbit,