參數(shù)資料
型號(hào)： AM29F160DB75FI
廠(chǎng)商： ADVANCED MICRO DEVICES INC
元件分類(lèi)： PROM
英文描述： Triple 3-Input Positive-AND Gates 14-SOIC -40 to 85
中文描述： 1M X 16 FLASH 5V PROM, 70 ns, PDSO48
封裝： REVERSE, MO-142DD, TSOP-48
文件頁(yè)數(shù)： 38/46頁(yè)
文件大?。?/td> 878K
代理商： AM29F160DB75FI
Am29F160D
43
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 5.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 9
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Unit
Comments
Sector Erase Time
1.0
8
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time (Note 2)
25
s
Byte Programming Time
7
300
s
Excludes system level
overhead (Note 5)
Word Programming Time
11
360
s
Chip Programming Time
Byte Mode
15
45
s
Word Mode
12
35
s
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C
10
Years
125
°C
20
Years
相關(guān)PDF資料
PDF描述
AM29F200BB-120ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F200BB-120EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F200BB-120SD Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:44-SOIC; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F200BB-70EC Flash Memory IC; Access Time, Tacc:70ns; Package/Case:48-TSOP; Leaded Process Compatible:No; Memory Configuration:256K x 8; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No
AM29F200BB-70ED Flash Memory IC; Memory Size:2Mbit; Memory Configuration:256K x 8; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Mounting Type:Surface Mount RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F160DB-90ED/T 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, BOT, TSOP48, COM, HAZMAT - Tape and Reel
AM29F160DB-90EF 功能描述:閃存 16Mb 90ns 5V Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F160DB-90EI 制造商:Spansion 功能描述:
AM29F160DT-120EI 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, TOP, TSOP48, IND - Trays
AM29F160DT-70EF\\T 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8/1MX16 70NS 48TSOP - Tape and Reel
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