參數(shù)資料
型號(hào)： AM29F160DB75EC
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： Triple 3-Input Positive-AND Gates 14-TVSOP -40 to 85
中文描述： 1M X 16 FLASH 5V PROM, 70 ns, PDSO48
封裝： MO-142DD, TSOP-48
文件頁(yè)數(shù)： 15/46頁(yè)
文件大?。?/td> 878K
代理商： AM29F160DB75EC
22
Am29F160D
Command Definitions
Table 9.
Am29F160D Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses
latch on the falling edge of the WE# or CE# pulse, whichever
happens later.
PD = Data to be programmed at location PA. Data latches on the
rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A19–A12 uniquely select any sector.
Notes:
1.
See Table 1 for description of bus operations.
2.
All values are in hexadecimal.
3.
Except when reading array or autoselect data, all bus cycles are
write operations.
4.
Data bits DQ15–DQ8 are don’t cares for unlock and command
cycles.
5.
Address bits A19–A11 are don’t cares for unlock and command
cycles, unless SA or PA required.
6.
No unlock or command cycles required when reading array data.
7.
The Reset command is required to return to reading array data
when device is in the autoselect mode, CFI query mode, or if
DQ5 goes high (while the device is providing status data).
8.
The fourth cycle of the autoselect command sequence is a read
cycle.
9.
The data is 00h for an unprotected sector and 01h for a protected
information.
10. Command is valid when device is ready to read array data or
when device is in autoselect mode.
11. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
12. The Unlock Bypass Reset command is required to return to
reading array data when the device is in the unlock bypass mode.
13. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend mode.
The Erase Suspend command is valid only during a sector erase
operation.
14. The Erase Resume command is valid only during the Erase
Suspend mode.
Command
Sequence
Cy
c
les
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data Addr
Data
Addr Data
Addr
Data
1
RA
RD
Reset (Note 7)
1
XXX
F0
A
u
tose
lec
t(N
Manufacturer ID
Word
4
555
AA
2AA
55
555
90
X00
01
Byte
AAA
555
AAA
Device ID,
Top Boot Block
Word
4
555
AA
2AA
55
555
90
X01
22D2
Byte
AAA
555
AAA
X02
D2
Device ID,
Bottom Boot Block
Word
4
555
AA
2AA
55
555
90
X01
22D8
Byte
AAA
555
AAA
X02
D8
Sector Protect Verify
Word
4
555
AA
2AA
55
555
90
(SA)
X02
XX00
XX01
Byte
AAA
555
AAA
(SA)
X04
00
01
CFI Query (Note 10)
Word
1
555
98
Byte
AAA
Program
Word
4
555
AA
2AA
55
555
A0
PA
PD
Byte
AAA
555
AAA
Unlock Bypass
Word
3
555
AA
2AA
55
555
20
Byte
AAA
555
AAA
Unlock Bypass Program (Note 11)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 12)
2
XXX
90
XXX
00
Chip Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Byte
AAA
555
AAA
555
AAA
Sector Erase
Word
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Byte
AAA
555
AAA
555
Erase Suspend (Note 13)
1
XXX
B0
Erase Resume (Note 14)
1
XXX
30
相關(guān)PDF資料
PDF描述
AM29F160DB75EI Triple 3-Input Positive-AND Gates 14-TVSOP -40 to 85
AM29F160DB75FC Triple 3-Input Positive-AND Gates 14-TVSOP -40 to 85
AM29F160DB75FI Triple 3-Input Positive-AND Gates 14-SOIC -40 to 85
AM29F200BB-120ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
AM29F200BB-120EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:2Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29F160DB-75EF 功能描述:閃存 16Mb 75ns 5V Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F160DB-90ED/T 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, BOT, TSOP48, COM, HAZMAT - Tape and Reel
AM29F160DB-90EF 功能描述:閃存 16Mb 90ns 5V Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
AM29F160DB-90EI 制造商:Spansion 功能描述:
AM29F160DT-120EI 制造商:Spansion 功能描述:16M (2MX8/1MX16) 5V, BOOT BLOCK, TOP, TSOP48, IND - Trays
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