參數(shù)資料
型號: AM29F080B-90SF
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 8兆位(1米× 8位)的CMOS 5.0伏只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 32/39頁
文件大?。?/td> 517K
代理商: AM29F080B-90SF
30
Am29F080B
21503G5 November1,2006
D AT A S H E E T
AC CHARACTERISTICS
Enter
Embedded
Erasing
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
Note:
The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 must be read at an address within the erase-suspended
sector.
Figure 15.
DQ2 vs. DQ6
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
RESET#
t
VIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 or 5 V
Figure 16.
Temporary Sector Group Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
AM29F080B-90SK 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120EF 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120EK 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120SD 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F080B-120SF 8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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