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參數(shù)資料
| 型號(hào)： | AM29F040B-55EC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 |
| 封裝： | MO-142BD, TSOP-32 |
| 文件頁(yè)數(shù)： | 35/35頁(yè) |
| 文件大?。?/td> | 553K |
| 代理商： | AM29F040B-55EC |
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Am29F040B
35
REVISION SUMMARY
Revision A (May 1997)
Initial release.
Revision B (January 1998)
Global
Formatted for consistency with other 5.0 volt-only data
data sheets.
Revision B+1 (January 1998)
AC Characteristics, Erase and Program Operations
Added Note references to t
WHWH1
. Corrected the pa-
rameter symbol for V
CC
Set-up Time to t
VCS
; the
specification is 50 μs minimum. Deleted the last row in
table.
Revision B+2 (April 1998)
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Ordering Infomation
Added extended temperature availability to the -55 and
-70 speed options.
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes:
Corrected the
notes reference for t
WHWH1
and t
WHWH2
.
These parameters are 100% tested. Corrected the note
reference for t
VCS
. This parameter is not 100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision C (January 1999)
Global
Updated for CS39S process technology.
Distinctive Characteristics
Added 20-year data retention bullet.
DC Characterisitics—TTL/NMOS Compatible
V
OH
: Changed the parameter description to “Output
High Voltage” from Output High Level”.
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
I
CC1
, I
CC2
, I
CC3
: Added Note 2 “Maximum I
CC
specifi-
cations are tested with V
CC
= V
CCmax
”.
I
CC3
: Deleted V
CC
= V
CC
Max.
Revision C+1 (February 1999)
Command Definitions
Command Definitions table:
Deleted “XX” from the
fourth cycle data column of the Sector Protect Verify
command.
Revision C+2 (May 17, 1999)
Test Specifications Table
Corrected the input and output measurement entries in
the “All others” column.
Revision D (November 15, 1999)
AC Characteristics—Figure 9. Program Operations
Timing and Figure 10. Chip/Sector Erase
Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E (November 29, 2000)
Added table of contents.
Ordering Information
Deleted burn-in option.
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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PDF描述 |
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| AM29F040B-120PK | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120ED | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120EF | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120EK | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F040B-120JD | 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F040B-55ED | 制造商:Spansion 功能描述:IC FLASH 4MB SMD 29F040 TSOP32 |
| AM29F040B-55EE | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 55ns 32-Pin TSOP |
| AM29F040B-55EF | 功能描述:閃存 4M (512Kx8) 55ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| AM29F040B-55EI | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 4Mbit 512K x 8bit 55ns 32-Pin TSOP |
| AM29F040B-55EI\\T | 制造商:Spansion 功能描述: |
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