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參數(shù)資料
| 型號： | AM29F040-90EE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 |
| 封裝： | TSOP-32 |
| 文件頁數(shù)： | 28/33頁 |
| 文件大?。?/td> | 190K |
| 代理商： | AM29F040-90EE |
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28
Am29F040
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. 25
°
C, 5 V V
CC
, 100,000 cycles.
2. Under worst case condition of 90
°
C, 4.5 V V
CC
, 100,000 cycles.
3. System-level overhead is defined as the time required to execute the four bus cycle command necessary to program each
byte. In the preprogramming step of the Embedded Erase algorithm, all bytes are programmed to 00H before erasure.
4. The Embedded Algorithms allow for 1.8 ms byte program time. DQ5 = “1" only after a byte takes the theoretical maximum time
to program. A minimal number of bytes may require significantly more programming pulses than the typical byte. The majority
of the bytes will program within one or two pulses (7 to 14
μ
s). This is demonstrated by the Typical and Maximum Programming
Times listed above.
LATCHUP CHARACTERISTICS
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V one pin at a time.
LCC PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25
°
C, f = 1.0 MHz.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25
°
C, f = 1.0 MHz.
Parameter
Typ
Max
Unit
Comments
Sector Erase Time
1.0 (Note 1)
8
sec
Excludes 00H programming prior to erasure
Chip Erase Time
8 (Note 1)
64
sec
Excludes 00H programming prior to erasure
Byte Programming Time
7 (Note 1)
300 (Note 2)
μ
s
Excludes system-level overhead (Note 3)
Chip Programming Time
3.6 (Note 1)
10.8 (Notes 2, 4)
sec
Excludes system-level overhead (Note 3)
Min
Max
Input Voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F040-90EEB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-90EI | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-90EIB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-90FC | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F040-90FCB | 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
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