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參數(shù)資料
| 型號： | AM29F032B-120SC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 4M X 8 FLASH 5V PROM, 120 ns, PDSO44 |
| 封裝： | MO-180AA, SOP-44 |
| 文件頁數(shù)： | 35/39頁 |
| 文件大?。?/td> | 937K |
| 代理商： | AM29F032B-120SC |
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34
Am29F032B
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 5.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2.
Under worst case conditions of 90°C, V
CC
= 4.5 V 1,000,000 cycles (4.75 V for -75).
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does
the device set DQ5 = 1. See the section on DQ5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for programming. See Table 5 for further
information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTIC
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 Volt, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25
°
C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
sec
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
64
sec
Byte Programming Time
7
300
μs
Excludes system-level overhead
(Note 5)
Chip Programming Time (Note 3)
28.8
86.4
sec
Description
Min
Max
Input Voltage with respect to V
SS
on I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Conditions
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F032B | 32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F032B-120 | 32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F032B-120EC | 32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F032B-120EE | 32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
| AM29F032B-120EI | 32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F032B75ED | 制造商:Advanced Micro Devices 功能描述: |
| AM29F032B-75EF | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:32M (4M X 8-BIT) 5V FLSH SCTR 制造商:Spansion 功能描述:IC, FLASH MEM, 32MBIT, 75NS, 40-TSOP, Memory Type:Flash - NOR, Memory Size:32Mbi |
| AM29F032B-75EF\\T | 制造商:Spansion 功能描述:32M (4MX8) 5V, UNIFORM SECTOR, TSOP40, IND, HAZMAT TR - Tape and Reel |
| AM29F032B-75EF\T | 制造商:Spansion 功能描述:32M (4MX8) 5V, UNIFORM SECTOR, TSOP40, IND, HAZMAT TR - Tape and Reel |
| AM29F032B-75SF | 功能描述:閃存 32M (4MX8) 75ns 5v Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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