參數(shù)資料
型號: AM29F017D-150E4I
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述: 2M X 8 FLASH 5V PROM, 150 ns, PDSO40
封裝: MO-142CD, TSOP-40
文件頁數(shù): 35/44頁
文件大?。?/td> 1021K
代理商: AM29F017D-150E4I
34
Am29F017D
AC CHARACTERISTICS
Temporary Sector Unprotect
Note:
Not 100% tested.
Parameter
All Speed Options
JEDEC
Std
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
Enter
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Embedded
Erasing
Note:
The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the
erase-suspended sector.
Figure 15.
DQ2 vs. DQ6
RESET#
t
VIDR
12 V
0 or 5 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
0 or 5 V
Figure 16.
Temporary Sector Group Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
AM29F017D-150EC 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017D-150EE 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017D-150EI 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B 4 Megabit (512K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory(4M位均勻扇區(qū)閃速存儲器)
AM29LV2562M 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
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