參數(shù)資料
型號： AM29F017D-150E4E
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
中文描述： 2M X 8 FLASH 5V PROM, 150 ns, PDSO40
封裝： MO-142CD, TSOP-40
文件頁數(shù)： 43/44頁
文件大?。?/td> 1021K
代理商： AM29F017D-150E4E
42
Am29F017D
REVISION SUMMARY
Revision A (July 1997)
Initial release of the Am29F017B device (0.35 μm).
Revision B (January 1998)
Global
Made formatting and layout consistent with other data
sheets. Used updated common tables and diagrams.
The online version has slightly modified formatting.
Revision B+1 (January 1998)
Reset Command
Deleted paragraph referring to RESET# waveforms.
AC Characteristics—Read-only Operations
Deleted note referring to output driver disable time.
Figure 16—Temporary Sector Group Unprotect
Timings
Corrected title to indicate “sector group.”
Revision B+2 (April 1998)
Global
Added -70 speed option, deleted -75 speed option.
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Ordering Information
Added extended temperature availability.
Operating Ranges
Added extended temperature range.
DC Characteristics, CMOS Compatible
Corrected the CE# and RESET# test conditions for
I
CC3
and I
CC4
to V
CC
±0.5 V.
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes: Corrected the
notes reference for tWHWH1 and tWHWH2. These
parameters are 100% tested. Corrected the note
reference for t
VCS
. This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for t
VIDR
. This parameter is not
100% tested.
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision B+3 (August 1998)
Global
The Am29F017B is now available in 40-pin standard
and reverse TSOP packages.
DC Characteristics
Moved the V
CC
max test condition for I
CC
specifications
to notes.
Revision C (January 1999)
Global
Updated for CS39S process technology.
Distinctive Characteristics
Added:
I
20-year data retention at 125
°
C
— Reliable operation for the life of the system
Ordering Information
Valid Combinations
: Eliminated the extended tempera-
ture range option for Am29F017B-70.
DC Characteristics—CMOS Compatible
I
CC3
, I
CC4
: Added Note 5, “For CMOS mode only I
CC3
,
I
CC4
= 20 μA at extended temperature (>+85°C)”.
Revision C+1 (March 23, 1999)
Operating Ranges
The temperature ranges are now specified as ambient.
Revision C+2 (May 17, 1999)
Product Seletor Guide
Corrected the t
OE
specification for the 150 ns speed
option to 55 ns.
Operating Ranges
V
CC
Supply Voltages
: Added V
CC
for ± 5% devices.
Changed “V
CC
for± all devices” to “V
CC
for ± 10% all
devices.”
Revision D (November 16, 1999)
Distinctive Characteristics
Package Options:
Added 40-pin TSOP.
AC Characteristics—Figure 11. Program
Operations Timing and Figure 12. Chip/Sector
Erase Operations
Deleted t
GHWL
and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
相關(guān)PDF資料
PDF描述
AM29F017D-150E4I 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017D-150EC 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017D-150EE 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F017D-150EI 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
AM29F040B 4 Megabit (512K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory(4M位均勻扇區(qū)閃速存儲器)
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