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參數(shù)資料
| 型號： | AM29F016-75FIB |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| 中文描述： | 16兆位（2097152 × 8位）的CMOS 5.0伏只，扇區(qū)擦除閃存 |
| 文件頁數(shù)： | 34/36頁 |
| 文件大小： | 219K |
| 代理商： | AM29F016-75FIB |
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34
Am29F016
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. 25
°
C, 5 V V
CC
, 100,000 cycles.
2. Although Embedded Algorithms allow for a longer chip program and erase time, the actual time will be considerably less since
bytes program or erase significantly faster than the worst case byte.
3. Under worst case condition of 90
°
C, 4.5 V V
CC
, 100,000 cycles.
LATCHUP CHARACTERISTIC
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 Volt, one pin at a time.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25
°
C, f = 1.0 MHz.
Parameter
Limits
Unit
Comments
Min
Typ
Max
Sector Erase Time
1 (Note 1)
8
sec
Excludes 00H programming prior
to erasure
Chip Erase Time
32
256
sec
Excludes 00H programming prior
to erasure
Byte Programming Time
7
300 (Note 3)
μ
s
Excludes system-level overhead
Chip Programming Time
14.4 (Note 1)
43.2 (Notes 2, 3)
sec
Excludes system-level overhead
Min
Max
Input Voltage with respect to V
SS
on I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Conditions
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29F016-90 | 16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory |
| AM29F016B-120DGC1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DPC1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DGI1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
| AM29F016B-120DPI1 | 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F016-90EC | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 5V 16M-Bit 2M x 8 90ns 48-Pin TSOP |
| AM29F016B-120DGC1 | 制造商:Spansion 功能描述:FLASH PARALLEL 5V 16MBIT 2MX8 120NS DIE - Gel-pak, waffle pack, wafer, diced wafer on film |
| AM29F016B-120DPC1 | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 16Mbit 2M x 8bit 120ns Die |
| AM29F016B120EC | 制造商:Advanced Micro Devices 功能描述: |
| AM29F016B-120EC | 制造商:Advanced Micro Devices 功能描述: |
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