- 您現(xiàn)在的位置：買賣IC網 > PDF目錄366412 > AM29F002NBT-90 (Advanced Micro Devices, Inc.) 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號： | AM29F002NBT-90 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 2兆位（256畝× 8位）的CMOS 5.0伏，只引導扇區(qū)閃存 |
| 文件頁數(shù)： | 35/40頁 |
| 文件大?。?/td> | 792K |
| 代理商： | AM29F002NBT-90 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁當前第35頁第36頁第37頁第38頁第39頁第40頁
34
Am29F002B/Am29F002NB
November 28, 2000
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25×C, 5.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 4.5 V (4.75 V for ±5% devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 5
for further information on command definitions.
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 5.0 V, one pin at a time. RESET# not available on Am29F002NB.
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
1
8
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
7
s
Byte Programming Time
7
300
μs
Excludes system level
overhead (Note 5)
Chip Programming Time (Note 3)
1.8
5.4
s
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
相關PDF資料 |
PDF描述 |
|---|---|
| AM29F002NBT-120 | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F002NBT-55 | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F002NBT-70 | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F002 | High Speed CMOS Logic Inverting Octal Buffer/Line Drivers with 3-State Outputs 20-CDIP -55 to 125 |
| AM29F002B | High Speed CMOS Logic Non-Inverting Octal Buffer/Line Drivers with 3-State Outputs 20-CDIP -55 to 125 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F002NBT-90EF | 制造商:Spansion 功能描述:NOR Flash Parallel 5V 2Mbit 256K x 8bit 90ns 32-Pin TSOP |
| AM29F002NBT-90JD | 制造商:Spansion 功能描述:FLASH MEM PARALLEL 5V 2M-BIT 256K X 8 90NS 32-PIN PLCC - Rail/Tube |
| AM29F002NBT-90JF | 制造商:Spansion 功能描述: |
| AM29F002NT-90EC | 制造商:Advanced Micro Devices 功能描述:256K X 8 FLASH 5V PROM, 90 ns, PDSO32 |
| AM29F002T-120JI | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 256K x 8, 32 Pin, Plastic, PLCC |
發(fā)布緊急采購，3分鐘左右您將得到回復。