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參數(shù)資料
| 型號： | AM29F002NB-55JC |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | 256K X 8 FLASH 5V PROM, 55 ns, PQCC32 |
| 封裝： | PLASTIC, LCC-32 |
| 文件頁數(shù)： | 13/37頁 |
| 文件大?。?/td> | 436K |
| 代理商： | AM29F002NB-55JC |
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Am29F002/Am29F002N
13
P R E L I M I N A R Y
commands can be assumed to be less than 50
μ
s, the
system need not monitor DQ3.
Any command other
than Sector Erase or Erase Suspend during the
time-out period resets the device to reading array
data.
The system must rewrite the command sequence
and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. On the Am29F002 only, note that a
hard-
ware reset
during the sector erase operation immedi-
ately terminates the operation. The Sector Erase
command sequence should be reinitiated once the de-
vice has returned to reading array data, to ensure data
integrity.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the sta-
tus of the erase operation by using DQ7, DQ6, or DQ2.
Refer to “Write Operation Status” for information on
these status bits.
Figure 3 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagram for timing
waveforms.
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2.
See “DQ3: Sector Erase Timer” for more information.
Figure 3.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
20818C-6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am29F002NB-55JCB | CAP, 180UF, 2V, 20%, 7343-28 |
| Am29F002NB-55JE | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F002NB-55JEB | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| AM29F002NB-55JI | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
| Am29F002NB-55JIB | 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29F002NB-55PC | 制造商:Advanced Micro Devices 功能描述:256K X 8 FLASH 5V PROM, 55 ns, PDIP32 |
| AM29F002NB-70EC | 制造商:Advanced Micro Devices 功能描述:256K X 8 FLASH 5V PROM, 70 ns, PDSO32 |
| AM29F002NB-90EC | 制造商:Advanced Micro Devices 功能描述:256K X 8 FLASH 5V PROM, 90 ns, PDSO32 |
| AM29F002NBB-120JC | 制造商:Spansion 功能描述:2M (256KX8) 5V, BOOT BLOCK, BOT, PLCC32, COM - Rail/Tube |
| AM29F002NBB-55JC | 制造商:Advanced Micro Devices 功能描述:256K X 8 FLASH 5V PROM, 55 ns, PQCC32 |
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