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  2. 參數(shù)資料
    型號(hào): AM29DL400BT-80FE
    廠商: ADVANCED MICRO DEVICES INC
    元件分類: PROM
    英文描述: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
    中文描述: 256K X 16 FLASH 3V PROM, 80 ns, PDSO48
    封裝: REVERSE, MO-142DD, TSOP-48
    文件頁(yè)數(shù): 1/42頁(yè)
    文件大?。?/td> 534K
    代理商: AM29DL400BT-80FE
    PRELIMINARY
    Publication#
    21606
    Issue Date:
    April 1998
    Rev:
    C
    Amendment/
    0
    Am29DL400B
    4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
    CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
    DISTINCTIVE CHARACTERISTICS
    I
    Simultaneous Read/Write operations
    — Host system can program or erase in one bank,
    then immediately and simultaneously read from
    the other bank
    — Zero latency between read and write operations
    — Read-while-erase
    — Read-while-program
    I
    Single power supply operation
    — 2.7 to 3.6 volt read and write operations for
    battery-powered applications
    I
    Manufactured on 0.35 μm process technology
    I
    High performance
    — Access times as fast as 70 ns
    I
    Low current consumption (typical values
    at 5 MHz)
    — 7 mA active read current
    — 21 mA active read-while-program or read-while-
    erase current
    — 17 mA active program-while-erase-suspended
    current
    — 200 nA in standby mode
    — 200 nA in automatic sleep mode
    — Standard t
    CE
    chip enable access time applies to
    transition from automatic sleep mode to active
    mode
    I
    Flexible sector architecture
    — Two 16 Kword, two 8 Kword, four 4 Kword, and
    six 32 Kword sectors in word mode
    — Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and
    six 64 Kbyte sectors in byte mode
    — Any combination of sectors can be erased
    — Supports full chip erase
    I
    Unlock Bypass Program Command
    — Reduces overall programming time when
    issuing multiple program command sequences
    I
    Sector protection
    — Hardware method of locking a sector to prevent
    any program or erase operation within that
    sector
    — Sectors can be locked in-system or via
    programming equipment
    — Temporary Sector Unprotect feature allows code
    changes in previously locked sectors
    I
    Top or bottom boot block configurations
    available
    I
    Embedded Algorithms
    — Embedded Erase algorithm automatically
    pre-programs and erases sectors or entire chip
    — Embedded Program algorithm automatically
    programs and verifies data at specified address
    I
    Minimum 1 million program/erase cycles
    guaranteed per sector
    I
    Package options
    — 44-pin SO
    — 48-pin TSOP
    I
    Compatible with JEDEC standards
    — Pinout and software compatible with
    single-power-supply flash standard
    — Superior inadvertent write protection
    I
    Data# Polling and Toggle Bits
    — Provides a software method of detecting
    program or erase cycle completion
    I
    Ready/Busy# output (RY/BY#)
    — Hardware method for detecting program or
    erase cycle completion
    I
    Erase Suspend/Erase Resume
    — Suspends or resumes erasing sectors to allow
    reading and programming in other sectors
    — No need to suspend if sector is in the other bank
    I
    Hardware reset pin (RESET#)
    — Hardware method of resetting the device to
    reading array data
    相關(guān)PDF資料
    PDF描述
    AM29DL400BT-80FEB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
    AM29DL400BT-80FI 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
    AM29DL400BT-80FIB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
    AM29DL400BT-80SC 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
    AM29DL400BT-80SCB 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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