參數(shù)資料
型號: AM29DL324GT30EFN
廠商: Spansion Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個M × 8位/ 2米x 16位),3.0伏的CMOS只,同時作業(yè)快閃記憶體
文件頁數(shù): 57/58頁
文件大?。?/td> 875K
代理商: AM29DL324GT30EFN
December4,2006 25686B10
Am29DL32xG
55
D A T A S H E E T
REVISION SUMMARY
Revision A (November 7, 2001)
Global
Initial release. This device replaces the AM29DL32xD.
Revision B (July 31, 2002)
Global
Added LAA064 package.
Ordering Information
Corrected package marking for FBGA.
AC Characteristics
Added 70 ns speed grade to Test Specifications and
Read-Only Operations
Revision B + 1 (August 27, 2002)
Distinctive Characteristics
Changed write cycles guaranteed per sector to erase
cycles guaranteed per sector.
Connection Diagrams, Special Handling
Instructions for FBGA Package
Changed text to reflect revised handling instructions.
Ordering Information
Added 120 ns to Valid Combinations for TSOP Pack-
ages.
Table 7, Autoselect Codes, (High Voltage Method)
Changed Secured Silicon
Indicator Bit (DQ7 to DQ0)
from 81h to 82h (factory locked); 01h to 02h (not fac-
tory locked).
Sector/Sector Block Protection and Unprotection
Removed paragraph referring to programming equip-
ment.
Common Flash Memory Interface (CFI)
Corrected third paragraph text to indicate that reset
command will return device to reading array data.
Changed CFI URL to current link.
Command Definitions
Corrected first paragraph text regarding incorrect ad-
dress and data values.
Table 14, Command Definitions
Changed Sector/Sector Block Protect Verify fourth bus
cycle from 81/01 to 82/02.
DC Characteristics, CMOS Compatible
Removed IACC from table.
AC Characteristics, Alternate CE# Controlled Erase
and Program Operations
Change t
BHEL
from 0b to 0.
TSOP and SO Pin Capacitance
Added Fine-Pitch BGA capacitance to table.
Revision B + 2 (November 6, 2002)
Global
Removed 60 ns speed option and references to 80 ns
speed option.
Removed reverse 48-pin TSOP package option.
Connection Diagrams, 64-Ball Fortified BGA
Changed RFU to NC.
Package Capacitance
Removed references to SO package.
Revision B + 3 (April 21, 2003)
Connection Diagrams
Updated 64-Ball Fortified FBA (11 x 13 mm); changed
C5 from A21 to NC.
Revision B + 4 (March 26, 2004)
Connection Diagrams
Updated array numbering scheme of 48-Ball
Fine-pitch FBA (6 x 12 mm) to match the physical dia-
gram.
Revision B + 5 (May 20, 2004)
Global
Converted document to full datasheet version.
Table 5, “Bottom Boot Sector Addresses”
Added table.
Revision B + 6 (June 4, 2004)
Ordering Information
Added Lead-free (Pb-free) options to the Temperature
Range breakout of the OPN table and the Valid Com-
binations table.
Revision B + 7 (September 27, 2004)
Cover sheet and title page
Added notation to superseding documents.
相關PDF資料
PDF描述
AM29DL324GT30EI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL324GT30EIN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL324GT30PCF 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL324GT30PCFN 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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