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參數(shù)資料
| 型號： | AM29DL324DT120EE |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 2M X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 26/56頁 |
| 文件大?。?/td> | 649K |
| 代理商： | AM29DL324DT120EE |
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December 13, 2005
Am29DL322D/323D/324D
25
again read array data with the same exception. See
the Erase Suspend/Erase Resume Commands sec-
tion for more information.
The system
must
issue the reset command to return a
bank to the read (or erase-suspend-read) mode if DQ5
goes high during an active program or erase opera-
tion, or if the bank is in the autoselect mode. See the
next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The Read-Only Operations table provides the read pa-
rameters, and Figure 13 shows the timing diagram.
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the se-
quence cycles in an erase command sequence before
erasing begins. This resets the bank to which the sys-
tem was writing to the read mode. Once erasure
begins, however, the device ignores reset commands
until the operation is complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to the read mode. If the
program command sequence is written to a bank that
is in the Erase Suspend mode, writing the reset
command returns that bank to the erase-sus-
pend-read mode. Once programming begins,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the se-
quence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to the read mode. If a bank
entered the autoselect mode while in the Erase Sus-
pend mode, writing the reset command returns that
bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation,
writing the reset command returns the banks to the
read mode (or erase-suspend-read mode if that bank
was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and device codes,
and determine whether or not a sector is protected.
Table 14 shows the address and data requirements.
This method is an alternative to that shown in Table 7,
which is intended for PROM programmers and re-
quires V
ID
on address pin A9. The autoselect
command sequence may be written to an address
within a bank that is either in the read or
erase-suspend-read mode. The autoselect command
may not be written while the device is actively pro-
gramming or erasing in the other bank.
The autoselect command sequence is initiated by first
writing two unlock cycles. This is followed by a third
write cycle that contains the bank address and the au-
toselect command. The bank then enters the
autoselect mode. The system may read at any ad-
dress within the same bank any number of times
without initiating another autoselect command
sequence:
■
A read cycle at address (BA)XX00h (where BA is
the bank address) returns the manufacturer code.
■
A read cycle at address (BA)XX01h in word mode
(or (BA)XX02h in byte mode) returns the device
code.
■
A read cycle to an address containing a sector ad-
dress (SA) within the same bank, and the address
02h on A7–A0 in word mode (or the address 04h on
A6–A-1 in byte mode) returns 01h if the sector is
protected, or 00h if it is unprotected. (Refer to Ta-
bles 3–6 for valid sector addresses).
The system must write the reset command to return to
the read mode (or erase-suspend-read mode if the
bank was previously in Erase Suspend).
Enter SecSi
TM
Sector/Exit SecSi Sector
Command Sequence
The SecSi Sector region provides a secured data area
containing a random, sixteen-byte electronic serial
number (ESN). The system can access the SecSi
Sector region by issuing the three-cycle Enter SecSi
Sector command sequence. The device continues to
access the SecSi Sector region until the system is-
sues the four-cycle Exit SecSi Sector command
sequence. The Exit SecSi Sector command sequence
returns the device to normal operation. The SecSi
Sector is not accessible when the device is executing
an Embedded Program or Embedded Erase algo-
rithm. Table 14 shows the address and data
requirements for both command sequences. See also
“SecSi
TM
(Secured Silicon) Sector Flash
Memory Region” for further information.
Byte/Word Program Command Sequence
The system may program the device by word or byte,
depending on the state of the BYTE# pin. Program-
ming is a four-bus-cycle operation. The program
command sequence is initiated by writing two unlock
write cycles, followed by the program set-up com-
mand. The program address and data are written next,
which in turn initiate the Embedded Program algo-
rithm. The system is
not
required to provide further
controls or timings. The device automatically provides
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