參數(shù)資料
型號: AM29DL322DT120
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個M × 8位/ 2米x 16位),3.0伏的CMOS只,同時作業(yè)快閃記憶體
文件頁數(shù): 54/54頁
文件大?。?/td> 629K
代理商: AM29DL322DT120
June 10, 2003
Am29DL322D/323D/324D
53
AC Characteristics
Read-only Operations:
Changed t
DF
specification to 16
ns.
Word/Byte Configuration:
Changed t
FLQZ
specification
to 16 ns.
Revision D+5 (May 8, 2001)
Global
Removed Preliminary status from data sheet.
SecSi
(Secured Silicon) Sector Flash
Memory Region
Noted changes for upcoming versions of these de-
vices: reduced SecSi Sector size, different ESN loca-
tion for top boot devices, and deletion of SecSi Sector
erase functionality. Current versions of these devices
remain unaffected.
Revision D+6 (June 10, 2003)
Unlock Bypass Command Sequence; Command
Definitions table
Text and table now state that addresses are don’t care
for the unlock bypass command sequence (that is, a
bank address is not required as previously stated).
Trademarks
Copyright 2001–2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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AM29DL322DT70R 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322DT90 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL323D 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL323DB120 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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參數(shù)描述
AM29DL322DT-90EI-T 制造商:Advanced Micro Devices 功能描述:
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