參數(shù)資料
型號: AM29DL322DB70R
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個M × 8位/ 2米x 16位),3.0伏的CMOS只,同時作業(yè)快閃記憶體
文件頁數(shù): 53/54頁
文件大?。?/td> 629K
代理商: AM29DL322DB70R
52
Am29DL322D/323D/324D
June 10, 2003
Revision C+4 (July 2, 1999)
Device Bus Operations
Sector Address Tables:
In the note below the tables,
corrected the bank address bit range for Am29DL323.
Revision C+5 (September 27, 1999)
Device Bus Operations
Sector Address tables: Corrected the bank address
bits specified.
Revision D (December 17, 1999)
Global
Changed Am29DL322C/323C to Am29DL322D/323D
to reflect new 0.23 μm process technology. Added 70
ns speed option.
AC Characteristics
Figure 17, Program Operations Timing; Figure 19,
Chip/Sector Erase Operations:
Deleted t
GHWL
and
changed OE# waveform to start at high.
Erase and Program Operations table; Alternate CE#
Controlled Erase and Program Operations table:
Changed the typical and maximum specifications for
programming time.
Erase and Programming Performance
In the table, changed the typical and maximum specifi-
cations for programming time.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision D+1 (June 21, 2000)
Global
Added information on the Am29DL324 device.
Device Bus Operations
Table 7, Autoselect Codes:
The SecSi Sector Indicator
Bit values have changed from 80h and 00h to 81h and
01h, respectively.
Command Definitions
Table 14, Command Definitions:
The SecSi Sector In-
dicator Bit values have changed from 80h and 00h to
81h and 01h, respectively.
Revision D+2 (August 3, 2000)
Block Diagram
Corrected “A0–A19” to “A0–A20”.
Table 3. Sector Addresses for Top Boot Sector
Devices
Changed the second occurrence of “Bank 2” in the
Am29DL324DT column to “Bank 1”. Added “A20 for
Am29DL324DT” to the note.
Table 5. Sector Addresses for Bottom Boot Sector
Devices
Changed the first occurrence of “Bank 2” in the
Am29DL324DB column to “Bank 1”. Added “A20 for
Am29DL324DB” to the note.
Revision D+3 (October 6, 2000)
Block Diagram
Added OE# and BYTE# inputs to lower bank section.
Ordering Information
Deleted burn-in option. Changed 70 ns speed option
from standard voltage range to regulated voltage
range.
Table 8, Top Boot Sector/Sector Block Addresses
for Protection/Unprotection
Corrected SA3 addess range to 000011XXX.
RESET#: Hardware Reset Pin
Corrected reference to I
CC
current in DC Characteris-
tics table.
Revision D+4 (April 27, 2001)
Distinctive Characteristics, General Description,
SecSi
(Secured Silicon) Sector Flash
Memory Region
Clarified that current version of device has 64 Kbyte
SecSi Sector; future versions will have 256 bytes.
Ordering Information
Added valid combinations for “N” designator.
Common Flash Memory Interface (CFI)
Modified first paragraph to indicate that the CFI Query
is not accessible when the device is executing an Em-
bedded Algorithm.
SecSi
(Secured Silicon) Sector Flash
Memory Region
Added note indicating that ACC and unlock bypass
are not available when programming the SecSi Sector.
Enter SecSi
Sector/Exit SecSi Sector Command
Sequence
Added statement that SecSi Sector is not accessible
when the device is executing an Embedded Program
or Embedded Erase algorithm.
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