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| 型號(hào)： | AM29DL322DB120 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| 中文描述： | 32兆位（4個(gè)M × 8位/ 2米x 16位），3.0伏的CMOS只，同時(shí)作業(yè)快閃記憶體 |
| 文件頁(yè)數(shù)： | 52/54頁(yè) |
| 文件大小： | 629K |
| 代理商： | AM29DL322DB120 |
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June 10, 2003
Am29DL322D/323D/324D
51
REVISION SUMMARY
Revision B (October 1998)
Global
Deleted the 90R and 120R speed options. Expanded
the full voltage range to 2.7–3.6 V.
Distinctive Characteristics
Added 125
°
C to 20-year data retention bullet.
Connection Diagrams
Changed the FBGA diagram from bottom view to
top view.
Ordering Information
Changed the FBGA ordering nomenclature to “YD.”
The package designation is now FBD063.
Device Bus Operations
Accelerated Program Operation
and
Write Protect
(WP#)
sections: Added note to indicate that the
WP#/ACC must not be left floating or unconnected.
Command Definitions
Unlock Bypass Command Sequence:
Added note to
indicate that the WP#/ACC must not be left floating or
unconnected.
DC Characteristics
Changed maximum I
LI
current to ±3.0 μA.
Erase and Programming Performance
Replaced TBDs in table with actual values.
Physical Dimensions
Updated the FBGA drawing, table, and notes. The
package designation is now FBD063. Deleted 40-pin
TSOP drawing.
Revision B+1 (October 1998)
Ordering Information
Valid Combinations table:
Changed combinations to
indicate YD for the FBGA package, but reverted to WD
in revision C.
Sector Address table
Corrected bank divisions for both sector address tables.
Command Definitions table
Added the term “sector block” to the notes where
appropriate.
DC Characteristics
Changed maximum I
LI
current to ±1.0 μA.
AC Characteristics
Temporary Sector Unprotect:
Moved the accelerated
program timing diagram to follow the program opera-
tions timings. Added the term “sector block” where
appropriate elsewhere on the page.
Revision C (January 1999)
Global
Changed data sheet title.
Product Selector Guide
Replaced “Full Voltage Range: V
CC
= 2.7–3.6 V” with
“Standard Voltage Range: V
CC
= 2.7–3.3 V.” Removed
70R speed option.
Ordering Information
Reverted FBGA designator to WD.
Secured Silicon (SecSi) Sector Flash Memory
Region
Factory Locked: SecSi Sector Programmed and Pro-
tected at the Factory:
Corrected the address range of the
ESN and distinguished between word and byte modes.
Operating Ranges
V
CC
Supply Voltages:
Replaced full voltage range with
standard voltage range.
Revision C+1 (January 1999)
Sector/Sector Block Protection and Unprotection
Tables
Changed the sector address range to A20—A12.
Revision C+2 (March 17, 1999)
Device Bus Operations
All references to SecureSector have been changed to
SecSi Sector.
Connection Diagrams
Modified FBGA drawing to show how outrigger balls
are shorted.
Revision C+3 (June 14, 1999)
Global
Changed data sheet status to Preliminary. Deleted all
references to the 56-pin TSOP package.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM29DL322DB70R | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL322DB90 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL322DT120 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL322DT70R | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
| AM29DL322DT90 | 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29DL322DB7REIT | 制造商:AMD 功能描述:New |
| AM29DL322DB-90WDIT | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 4MX8/2MX16 90NS 63FBGA - Tape and Reel |
| AM29DL322DT-90EI-T | 制造商:Advanced Micro Devices 功能描述: |
| AM29DL322GB-90EI | 制造商:Advanced Micro Devices 功能描述:2M X 16 FLASH 3V PROM, 90 ns, 48 Pin Plastic SMT |
| AM29DL322GT-90EI | 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP |
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