參數(shù)資料
型號(hào)： AM29DL322D
廠商： Advanced Micro Devices, Inc.
英文描述： 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述： 32兆位（4個(gè)M × 8位/ 2米x 16位），3.0伏的CMOS只，同時(shí)作業(yè)快閃記憶體
文件頁(yè)數(shù)： 4/54頁(yè)
文件大小： 629K
代理商： AM29DL322D
June 10, 2003
Am29DL322D/323D/324D
3
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Special Handling Instructions for FBGA Package ..........................6
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 7
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 8
Word/Byte Configuration ................................................................8
Requirements for Reading Array Data ...........................................8
Writing Commands/Command Sequences ....................................9
Simultaneous Read/Write Operations
with Zero Latency ...........................................................................9
Standby Mode ................................................................................9
Automatic Sleep Mode ...................................................................9
RESET#: Hardware Reset Pin .....................................................10
Output Disable Mode ...................................................................10
Autoselect Mode ..........................................................................15
Sector/Sector Block Protection and Unprotection ........................16
Write Protect (WP#) .....................................................................17
Temporary Sector Unprotect ........................................................17
Figure 1. Temporary Sector Unprotect Operation................................. 17
Figure 2. In-System Sector Protection/
Sector Unprotection Algorithms ............................................................ 18
SecSi
(Secured Silicon) Sector
Flash Memory Region ..................................................................19
Hardware Data Protection ............................................................20
Common Flash Memory Interface (CFI) . . . . . . . 20
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 22
Reading Array Data ......................................................................22
Reset Command ..........................................................................23
Autoselect Command Sequence ..................................................23
Enter SecSi
Sector/Exit SecSi Sector
Command Sequence ...................................................................23
Byte/Word Program Command Sequence ...................................23
Figure 3. Program Operation ................................................................ 24
Chip Erase Command Sequence .................................................24
Sector Erase Command Sequence ..............................................25
Erase Suspend/Erase Resume Commands ................................25
Figure 4. Erase Operation..................................................................... 26
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 28
DQ7: Data# Polling ......................................................................28
Figure 5. Data# Polling Algorithm ......................................................... 28
RY/BY#: Ready/Busy# .................................................................29
DQ6: Toggle Bit I ..........................................................................29
Figure 6. Toggle Bit Algorithm.............................................................. 29
DQ2: Toggle Bit II .........................................................................30
Reading Toggle Bits DQ6/DQ2 ....................................................30
DQ5: Exceeded Timing Limits ......................................................30
DQ3: Sector Erase Timer .............................................................30
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 32
Figure 7. Maximum Negative Overshoot Waveform............................. 32
Figure 8. Maximum Positive Overshoot Waveform .............................. 32
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 9. I
CC1
Current vs. Time (Showing Active and
Automatic Sleep Currents).................................................................... 34
Figure 10. Typical I
vs. Frequency................................................... 34
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 11. Test Setup.......................................................................... 35
Figure 12. Input Waveforms and Measurement Levels........................ 35
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 13. Read Operation Timings...................................................... 36
Figure 14. Reset Timings...................................................................... 37
Word/Byte Configuration (BYTE#) ...............................................38
Figure 15. BYTE# Timings for Read Operations.................................. 38
Figure 16. BYTE# Timings for Write Operations .................................. 38
Erase and Program Operations ...................................................39
Figure 17. Program Operation Timings ................................................ 40
Figure 18. Accelerated Program Timing Diagram ................................ 40
Figure 19. Chip/Sector Erase Operation Timings................................. 41
Figure 20. Back-to-back Read/Write Cycle Timings............................. 42
Figure 21. Data# Polling Timings (During Embedded Algorithms)....... 42
Figure 22. Toggle Bit Timings (During Embedded Algorithms) ............ 43
Figure 23. DQ2 vs. DQ6....................................................................... 43
Temporary Sector Unprotect ........................................................44
Figure 24. Temporary Sector Unprotect Timing Diagram..................... 44
Figure 25. Sector/Sector Block Protect and Unprotect Timing Diagram 45
Alternate CE# Controlled Erase and Program Operations ...........46
Figure 26. Alternate CE# Controlled Write (Erase/Program)
Operation Timings ................................................................................ 47
Erase And Programming Performance . . . . . . . 48
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 48
TSOP And SO Pin Capacitance. . . . . . . . . . . . . . 48
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 49
FBD063—63-ball Fine-Pitch Ball Grid Array (FBGA) 8 x 14 mm .49
TS 048—48-Pin Standard TSOP .................................................50
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 51
相關(guān)PDF資料
PDF描述
AM29DL322DB120 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322DB70R 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322DB90 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322DT120 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322DT70R 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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AM29DL322GT-90EI 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP
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