參數(shù)資料
型號(hào)： AM29DL322D_05
廠商： Advanced Micro Devices, Inc.
英文描述： 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述： 32兆位（4個(gè)M × 8位/ 2米x 16位），3.0伏的CMOS只，同時(shí)作業(yè)快閃記憶體
文件頁(yè)數(shù)： 56/56頁(yè)
文件大小： 649K
代理商： AM29DL322D_05
December 13, 2005
Am29DL322D/323D/324D
55
AC Characteristics
Read-only Operations:
Changed t
DF
specification to 16
ns.
Word/Byte Configuration:
Changed t
FLQZ
specification
to 16 ns.
Revision D+5 (May 8, 2001)
Global
Removed Preliminary status from data sheet.
SecSi
TM
(Secured Silicon) Sector Flash
Memory Region
Noted changes for upcoming versions of these de-
vices: reduced SecSi Sector size, different ESN
location for top boot devices, and deletion of SecSi
Sector erase functionality. Current versions of these
devices remain unaffected.
Revision D+6 (June 10, 2003)
Unlock Bypass Command Sequence; Command
Definitions table
Text and table now state that addresses are don’t care
for the unlock bypass command sequence (that is, a
bank address is not required as previously stated).
Revision D+7 (October 7, 2004)
Cover sheet and title page
Added notation to superseding documents.
Revision D+8 (December 13, 2005)
Clarified product availability in notation to superseding
documents.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limita-
tion, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as con-
templated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor de-
vices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design mea-
sures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating
conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign
Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior au-
thorization by the respective government entity will be required for export of those products.
Trademarks
Copyright 2004-2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
相關(guān)PDF資料
PDF描述
AM29DL324DB120EE 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL324DT120EE 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL323DT120 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322D 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322DB120 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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AM29DL322DB7REIT 制造商:AMD 功能描述:New
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AM29DL322GT-90EI 制造商:Advanced Micro Devices 功能描述:Flash Mem Parallel 3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP
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