參數(shù)資料
型號: AM29DL322C
廠商: Advanced Micro Devices, Inc.
英文描述: 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
中文描述: 32兆位(4個M × 8位/ 2米x 16位),3.0伏的CMOS只,同時作業(yè)快閃記憶體
文件頁數(shù): 52/52頁
文件大?。?/td> 363K
代理商: AM29DL322C
Am29DL322C/Am29DL323C
52
A D V A N C E I N F O R M A T I O N
REVISION SUMMARY
Revision B
Global
Deleted the 90R and 120R speed options. Expanded
the full voltage range to 2.7–3.6 V.
Distinctive Characteristics
Added 125
°
C to 20-year data retention bullet.
Connection Diagrams
Changed the FBGA diagram from bottom view to
top view.
Ordering Information
Changed the FBGA ordering nomenclature to “YD.”
The package designation is now FBD063.
Device Bus Operations
Accelerated Program Operation
and
Write Protect
(WP#)
sections: Added note to indicate that the
WP#/ACC must not be left floating or unconnected.
Command Definitions
Unlock Bypass Command Sequence:
Added note to
indicate that the WP#/ACC must not be left floating or
unconnected.
DC Characteristics
Changed maximum I
LI
current to ±3.0 μA.
Erase and Programming Performance
Replaced TBDs in table with actual values.
Physical Dimensions
Updated the FBGA drawing, table, and notes. The
package designation is now FBD063. Deleted 40-pin
TSOP drawing.
Revision B+1
Ordering Information
Valid Combinations table:
Corrected combinations to
indicate YD for the FBGA package.
Sector Address table
Corrected bank divisions for both sector address tables.
Command Definitions table
Added the term “sector block” to the notes where
appropriate.
DC Characteristics
Changed maximum I
LI
current to ±1.0 μA.
AC Characteristics
Temporary Sector Unprotect:
Moved the accelerated
program timing diagram to follow the program opera-
tions timings. Added the term “sector block” where
appropriate elsewhere on the page.
Revision C
Global
Changed data sheet title.
Product Selector Guide
Replaced “Full Voltage Range: V
CC
= 2.7–3.6 V” with
“Standard Voltage Range: V
CC
= 2.7–3.3 V.” Removed
70R speed option. Added 90R and 120R speed options.
Secured Silicon (SecSi) Sector Flash Memory
Region
Factory Locked: SecSi Sector Programmed and Pro-
tected at the Factory:
Corrected the address range of the
ESN and distinguished between word and byte modes.
Operating Ranges
V
CC
Supply Voltages:
Replaced full voltage range with
standard voltage range.
Revision C+1
Sector/Sector Block Protection and Unprotection
Tables
Changed the sector address range to A20—A12.
Trademarks
Copyright 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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AM29DL322CB120 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322CB90 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322CT120 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322CT90 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
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