參數(shù)資料
型號: AM29BL162CB90RZK
廠商: Spansion Inc.
英文描述: 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
中文描述: 16兆位(1米× 16位)的CMOS 3.0伏特,只有突發(fā)模式閃存
文件頁數(shù): 10/50頁
文件大?。?/td> 486K
代理商: AM29BL162CB90RZK
8
Am29BL162C
July 8, 2005
D A T A S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register it-
self does not occupy any addressable memory loca-
tion. The register is composed of latches that store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
the register serve as inputs to the internal state ma-
chine. The state machine outputs dictate the function of
the device.
Table 1
lists the device bus operations, the
inputs and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Table 1.
Device Bus Operations
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, SA = Sector Address, X = Don’t care.
Notes:
1. Addresses are A19:A0.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “
Sector
Protection/Unprotection”
section.
Operation
CE#
OE#
WE#
RESET#
CLK
LBA#
BAA#
Addresses
(
Note 1
)
Data
(DQ0–DQ15)
Read
L
L
H
H
X
X
X
A
IN
D
OUT
Write
L
H
L
H
X
X
X
A
IN
D
IN
Standby
V
CC
±
0.3 V
X
X
V
CC
±
0.3 V
X
X
X
X
HIGH Z
Output Disable
L
H
H
H
X
X
X
HIGH Z
HIGH Z
Reset
X
X
X
L
X
X
X
X
HIGH Z
Sector Protect (
Note 2
)
L
H
L
V
ID
X
X
X
Sector Address,
A6 = L, A1 = H,
A0 = L
D
IN
Sector Unprotect (
Note 2
)
L
H
L
V
ID
X
X
X
Sector Address,
A6 = H, A1 = H,
A0 = L
D
IN
Temporary Sector Unprotect
X
X
X
V
ID
X
X
X
A
IN
HIGH Z
Burst Read Operations
Load Starting Burst Address
L
X
H
H
L
H
A
IN
X
Advance Burst to Next Address (no
data presented on the data bus)
L
H
H
H
H
L
X
HIGH Z
Advance Burst to Next address
(appropriate data presented on the
data bus)
L
L
H
H
H
L
X
Data Out
DQ0-DQ15
Terminate Current Burst Read Cycle
H
X
H
H
X
X
X
HIGH Z
Terminate Current Burst Read Cycle;
Start New Burst Read Cycle
L
X
H
H
L
H
A
IN
X
Burst Suspend (all data is retained
internally in the device)
L
H
H
H
X
H
H
X
HIGH Z
Burst Resume (same data as Burst
Suspend)
L
L
H
H
H
H
X
Data Out
DQ0–DQ15
Burst Resume (incremented data from
Burst Suspend)
L
L
H
H
H
L
X
Data Out
DQ0–DQ15
相關(guān)PDF資料
PDF描述
AM29BL162CB-9DTE1 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1
AM29BL162CB-3DWE1 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1
AM29BL162CB-3DWH1 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1
AM29BL162CB-3DWI1 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1
AM29BL162CB-45DGE1 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1
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