參數(shù)資料
型號： AM29BL162CB70RZF
廠商： Spansion Inc.
英文描述： 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
中文描述： 16兆位（1米× 16位）的CMOS 3.0伏特，只有突發(fā)模式閃存
文件頁數(shù)： 49/50頁
文件大小： 486K
代理商： AM29BL162CB70RZF
July 8, 2005
Am29BL162C
47
D A T A S H E E T
Revision F (June 20, 2000)
Global
The “preliminary” designation has been removed from
the document. Parameters are now stable, and only
speed, package, and temperature range combinations
are expected to change in future data sheet revisions.
Distinctive Characteristics
Changed burst access time specification for the 65R
speed option in the industrial temperature range from
19 to 18 ns.
Product Selector Guide
Replaced t
OE
with t
BACC
to more clearly distinguish
burst mode access from asynchronous access times.
Note however, that in burst mode, t
OE
and t
BACC
spec-
ifications are identical. Changed t
BACC
for the 65R
speed option in the industrial temperature range from
19 to 18 ns.
Ordering Information
Burn-in processing is no longer available.
Requirements for Reading Array Data Array in
Asynchronous (Non-Burst) Mode
Clarified the description of how to terminate a burst
mode read operation.
Burst Mode Read with 40 MHz CLK figure
Changed t
BACC
for the 65R speed option in the indus-
trial temperature range from 19 to 18 ns.
Read Operations table
Changed t
OE
and t
DF
for the 65R speed option in the
industrial temperature range from 19 to 18 ns.
Burst Mode Read table
Changed t
OE
and t
BACC
for the 65R speed option in the
industrial temperature range from 19 to 18 ns.
Burst Mode Read figure
Corrected BAA# waveform to return high before the
final clock cycle shown.
Erase and Programming Performance table, Erase
and Program Operations table, Alternate CE#
Controlled Erase and Program Operations table
Resolved differences in typical sector erase times. The
typical sector erase time for all sectors is 3 sec.
Revision F+1 (November 21, 2000)
Added table of contents. Added Figure 1, In-System
Sector Protect/Unprotect Algorithms figure to docu-
ment (was missing from previous revisions).
Revision F+2 (July 22, 2002)
Pin Description,
IND# End of Burst Indicator
Clarified description of IND# function.
Table 1
,
Device Bus Operations
In burst read operations section, changed BAA# to “H”
for “Load starting Burst Address” and Terminate
Current Burst Read Cycle; Start New Burst Read
Cycle.”
Requirements for Reading Array Data in
Synchronous (Burst) Mode
Modified section to clarify the description of the IND#
and burst read functions.
Burst Sequence Table
Deleted table.
Absolute Maximum Ratings
Modified maximum DC voltage and maximum positive
overshoot in Note 1 to refer to input and I/O pins.
Revision F+3 (August 19, 2002)
Product Selector Guide
Added Note #2.
Revision F+4 (September 12, 2002)
Product Selector Guide
Removed Note #2.
Revision F+5 (November 22, 2002)
Distinctive Characteristics
Changed endurance to 1 million cycles.
Erase Suspend/Erase Resume Command
Sequence
Noted that only asynchronous reads are allowed during
the erase suspend mode.
Erase/Program Operations
table,
Alternate CE#
Controlled Erase/Program Operations
table
Changed typical sector erase time from 3 s to 1 s.
Erase and Programming Performance
Changed typical/maximum sector erase time from 3
s/60 s to 1 s/15 s, respectively. Changed typical chip
erase time from 40 s to 15 s. Changed endurance to 1
million cycles. Added Asynchronous mode and Burst
mode sections.
Revision F+6 (June 10, 2004)
Ordering Information
Changed temperature range from -55
°
C to -40
°
C
.
Revision F+7 (October 29, 2004)
Ordering Information
Added:
F= Industrial –40°C to +°85C) for Pb-free Package
K=Extended –55°C to +125°C) for Pb-free Package
相關(guān)PDF資料
PDF描述
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