參數(shù)資料
型號： AM29BL162CB65RZE
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
中文描述： 1M X 16 FLASH 3V PROM, 65 ns, PDSO56
封裝： SSOP-56
文件頁數(shù)： 19/50頁
文件大小： 486K
代理商： AM29BL162CB65RZE
July 8, 2005
Am29BL162C
17
D A T A S H E E T
COMMAND DEFINITIONS
Writing specific address and data commands or se-
quences into the command register initiates device op-
erations.
Table 8
defines the valid register command
sequences. Writing
incorrect
address and data val-
ues
or writing them in the
improper sequence
resets
the device to reading array data.
All addresses are latched on the falling edge of
WE# or CE#, whichever happens later. All data is
latched on the rising edge of WE# or CE#, whichever
happens first. Refer to the appropriate timing diagrams
in the
AC Characteristics
section.
Reading Array Data in Non-burst Mode
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Em-
bedded Erase algorithm.
After the device accepts an Erase Suspend com-
mand, the device enters the Erase Suspend mode.
The system can read array data using the standard
read timings, except that if it reads at an address
within erase-suspended sectors, the device outputs
status data. After completing a programming opera-
tion in the Erase Suspend mode, the system may
once again read array data with the same exception.
See “
Erase Suspend/Erase Resume Commands”
for
more information on this mode.
The system must issue the reset command to re-en-
able the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “
Reset Com-
mand”
section, next.
See also “
Requirements for Reading Array Data Array in
Asynchronous (Non-Burst) Mode”
in the “
Key to Switch-
ing Waveforms”
section for more information. The
Read
Operations
table provides the read parameters, and
Figure 15
shows the timing diagram.
Reading Array Data in Burst Mode
The device powers up in the non-burst mode. To read
array data in burst mode, the system must write the
four-cycle Burst Mode Enable command sequence
(see
Table 8
). The device then enters burst mode. In
addition to asserting CE#, OE#, and WE# control sig-
nals, burst mode operation requires that the system
provide appropriate LBA#, BAA#, and CLK signals. For
successful burst mode reads, the following events must
occur (refer to Figures
3
and
4
for this discussion):
1. The system asserts LBA# low, indicating to the de-
vice that a valid initial burst address is available on
the address bus. LBA# must be kept low until at
least the next rising edge of the CLK signal, upon
which the device loads the initial burst address.
2. The system returns LBA# to a logic high. The device
requires that the next rising edge of CLK occur with
LBA# high for proper burst mode operation. Typi-
cally, the initial number of CLK cycles depends on
the clock frequency and the rated speed of the de-
vice.
3. After the initial data has been read, the system as-
serts BAA# low to indicate it is ready to read the re-
maining burst read cycles. Each successive rising
edge of the CLK signal then causes the flash device
to increment the burst address and output sequen-
tial burst data.
4. When the device outputs the last word of data in the
32-word burst mode read sequence, the device out-
puts a logic low on the IND# pin. This indicates to
the system that the burst mode read sequence is
complete.
5. To exit the burst mode, the system must write the
four-cycle Burst Mode Disable command sequence.
The device also exits the burst mode if powered
down or if RESET# is asserted. The device does not
exit the burst mode if the reset command is written.
相關(guān)PDF資料
PDF描述
AM29BL162CB65RZF 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB65RZI 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB65RZK 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB-70R 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB70RZE 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29BL802CB-65RZET 制造商:Spansion 功能描述:
AM29C01WW WAF 制造商:Advanced Micro Devices 功能描述:
AM29C10API 制造商:Rochester Electronics LLC 功能描述:- Bulk
AM29C10AWW DIE 制造商:Advanced Micro Devices 功能描述:
AM29C116-1JC 制造商:Rochester Electronics LLC 功能描述:- Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*