參數(shù)資料
型號： AM29BL162CB120RZI
廠商： Spansion Inc.
英文描述： 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
中文描述： 16兆位（1米× 16位）的CMOS 3.0伏特，只有突發(fā)模式閃存
文件頁數(shù)： 12/50頁
文件大小： 486K
代理商： AM29BL162CB120RZI
10
Am29BL162C
July 8, 2005
D A T A S H E E T
Burst Suspend/Burst Resume Operations
The device offers Burst Suspend and Burst Resume
operations. When both OE# and BAA# are taken high,
the device removes (“suspends”) the data from the
outputs (because OE# is high), but “holds” the data
internally. The device resumes burst operation when
either OE# and/or BAA# is asserted low. Asserting the
OE# only causes the device to present the same data
that was held during the Burst Suspend operation. As
long as BAA# is high, the device continues to output
that word of data. Asserting both OE# and BAA# low
resumes the burst operation, and on the next rising
edge of CLK, increments the counter and outputs the
next word of data.
IND# End of Burst Indicator
The IND# output signal goes low when the device is
outputting the last word of a 32-word burst sequence
(word Da+31). When the starting address was loaded
with LBA#, the 5-bit burst address counter was set to
00000b. The counter increments to 11111b on the
32nd word in the burst sequence. If the system con-
tinues to assert BAA# low, on the next CLK the device
outputs the starting address data (Da). The burst
address counter is again set to 00000b, and is
“wrapped around.”
Writing Commands/Command Sequences
To write a command or command sequence (which in-
cludes programming data to the device and erasing sec-
tors of memory), the system must drive WE# and CE# to
V
IL
, and OE# to V
IH
.
The device features an
Unlock Bypass
mode to facili-
tate faster programming. Once the device enters the Un-
lock Bypass mode, only two write cycles are required to
program a word, instead of four. The “
Program Com-
mand Sequence”
section has details on programming
data to the device using both standard and Unlock By-
pass command sequences.
An erase operation can erase one sector, multiple sec-
tors, or the entire device.
Table 2
indicates the address
space that each sector occupies. A “sector address”
consists of the address bits required to uniquely select a
sector. The “
Command Definitions”
section has details
on erasing a sector or the entire chip, or suspending/re-
suming the erase operation.
After the system writes the autoselect command se-
quence, the device enters the autoselect mode. The sys-
tem can then read autoselect codes from the internal
register (which is separate from the memory array) on
DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the “
Autoselect Mode”
and “
Reset Com-
mand”
sections for more information.
I
CC2
in the DC Characteristics table represents the ac-
tive current specification for the write mode. The “
AC
Characteristics”
section contains timing specification ta-
bles and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and I
CC
read specifications apply. Refer to “
Write Operation Sta-
tus”
for more information, and to “
AC Characteristics”
for
timing diagrams.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, inde-
pendent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at V
CC
±
0.3 V.
(
Note
: This is a more restricted voltage range than V
IH
.)
If CE# and RESET# are held at V
IH
, but not within V
CC
±
0.3 V, the device is in the standby mode, but the
standby current is greater. The device requires standard
access time (t
CE
) for read access when the device is in
either of these standby modes, before it is ready to read
data.
If the device is deselected during erasure or program-
ming, the device draws active current until the operation
is completed.
In the
DC Characteristics
table, I
CC3
and I
CC4
represents
the standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically enables
this mode when addresses remain stable for t
ACC
+ 30
ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address
access timings provide new data when addresses are
changed. While in sleep mode, output data is latched
and always available to the system. I
CC4
in the
DC
Characteristics
table represents the automatic sleep
mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of reset-
ting the device to reading array data. When the system
drives the RESET# pin to V
IL
for at least a period of t
RP
,
the device
immediately terminates
any operation in
progress, tristates all data output pins, and ignores all
read/write attempts for the duration of the RESET#
pulse. The device also resets the internal state machine
to reading array data. The operation that was interrupted
should be reinitiated once the device is ready to accept
another command sequence, to ensure data integrity.
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