參數(shù)資料
型號(hào): AM29BL162CB-90R
廠商: Spansion Inc.
英文描述: 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
中文描述: 16兆位(1米× 16位)的CMOS 3.0伏特,只有突發(fā)模式閃存
文件頁數(shù): 42/50頁
文件大?。?/td> 486K
代理商: AM29BL162CB-90R
40
Am29BL162C
July 8, 2005
D A T A S H E E T
AC CHARACTERISTICS
Temporary Sector Unprotect
Note:
Not 100% tested.
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 22.
DQ2 vs. DQ6 for Erase and
Erase Suspend Operations
Enter
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Embedded
Erasing
Parameter
All Speed Options
JEDEC
Std.
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See
Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
RESET#
t
VIDR
12 V
0 or 3 V
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
Figure 23.
Temporary Sector Unprotect Timing Diagram
相關(guān)PDF資料
PDF描述
AM29BL162CB90RZE 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB90RZF 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB90RZI 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB90RZK 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB-9DTE1 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only, Burst-Mode, Boot Sector Flash Memory-Die Revision 1
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