參數資料
型號: AM29BL162CB-65R
廠商: Spansion Inc.
英文描述: 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
中文描述: 16兆位(1米× 16位)的CMOS 3.0伏特,只有突發(fā)模式閃存
文件頁數: 16/50頁
文件大?。?/td> 486K
代理商: AM29BL162CB-65R
14
Am29BL162C
July 8, 2005
D A T A S H E E T
Temporary Sector Unprotect
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RE-
SET# pin to V
ID
. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once V
ID
is removed from the RE-
SET# pin, all the previously protected sectors are
protected again.
Figure 2
shows the algorithm, and
Figure 23
shows the timing diagrams, for this feature.
HARDWARE DATA PROTECTION
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to
Table 8
for com-
mand definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during V
CC
power-up and
power-down transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not ac-
cept any write cycles. This protects data during V
CC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when V
CC
is greater than V
LKO
.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
START
Perform Erase or
Program Operations
RESET# = V
IH
Temporary Sector
Unprotect Completed
(Note 2)
RESET# = V
ID
(Note 1)
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
Figure 2.
Temporary Sector Unprotect Operation
相關PDF資料
PDF描述
AM29BL162CB65RZE 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB65RZF 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB65RZI 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB65RZK 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
AM29BL162CB-70R 16 Megabit (1 M x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
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