參數(shù)資料
型號(hào)： AM29BDS64HE8VFI
廠商： Spansion Inc.
英文描述： 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述： 128或64兆位（8米或4個(gè)M x 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存
文件頁數(shù)： 86/89頁
文件大?。?/td> 913K
代理商： AM29BDS64HE8VFI
84
Am29BDS128H/Am29BDS640H
27024B3 May 10, 2006
D A T A S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 1.8 V V
CC
, 1 million cycles. Additionally,
programming typicals assumes a checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC
= 1.65 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 20, “Memory Array Command Definitions,” on page 46 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
BGA BALL CAPACITANCE
Notes:
1.
2.
Sampled, not 100% tested.
Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
32 Kword
0.4
5
s
Excludes 00h programming prior to erasure
(Note 4)
4 Kword
0.2
5
Chip Erase Time
128 Mb
103
s
64 Mb
54
s
Word Programming Time
9
210
μs
Excludes system level overhead (Note 5)
Accelerated Word Programming Time
4
120
μs
Chip Programming Time
(Note 3)
128 Mb
75.5
226.5
s
64 Mb
38
114
s
Excludes system level overhead (Note 5)
Accelerated Chip
Programming Time
128 Mb
33
99
s
64 Mb
17
30
s
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
3.9
4.7
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
相關(guān)PDF資料
PDF描述
AM29BDS64HE8VKI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS64HE8VMI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS64HE9VFI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS64HE9VKI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
AM29BDS64HE9VMI 128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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