參數(shù)資料
型號： AM29BDS640GBD9WSI
廠商： SPANSION LLC
元件分類： PROM
英文描述： 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 14 ns, PBGA80
封裝： 11 X 12 MM, 0.80 MM PITCH, FBGA-80
文件頁數(shù)： 42/77頁
文件大小： 1581K
代理商： AM29BDS640GBD9WSI
May 9, 2006 25903C2
Am29BDS640G
45
Data
Sheet
DC Characteristics
CMOS Compatible
Notes:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. All ICC specifications are tested with VIO = VCC.
3. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
4. ICC active while Embedded Erase or Embedded Program is in progress.
5. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal
to ICC3.
Parameter Description
Test Conditions (Note 1,2)
Min
Typ.
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCCmax
±1
A
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCCmax
±1
A
ICCB
VCC Active Burst Read Current
CE# = VIL, OE# = VIH, WE# = VIH,
54 MHz
10
20
mA
CE# = VIL, OE# = VIH, WE# = VIH,
40 MHz
816
mA
IIO
VIO Non-active Output
VIO = 1.8 V, OE# = VIH
0.2
10
A
VIO = 3.0 V, OE# = VIH
0.2
10
A
ICC1
VCC Active Asynchronous Read
Current (Note 3)
CE# = VIL, OE# = VIH,
WE# = VIH
5 MHz
12
16
mA
1 MHz
3.55mA
ICC2
VCC Active Write Current (Note 4) CE# = VIL, OE# = VIH, VPP = VIH
15
40
mA
ICC3
VCC Standby Current (Note 5)
CE# = RESET# = VCC ± 0.2 V
0.2
10
A
ICC4
VCC Reset Current
RESET# = VIL, CLK = VIL
0.2
10
A
ICC5
VCC Active Current
(Read While Write)
CE# = VIL, OE# = VIH
25
60
mA
VIL
Input Low Voltage
VIO = 1.8 V
–0.5
0.2
V
VIO = 3.0 V
–0.5
0.4
V
VIH
Input High Voltage
VIO = 1.8 V
VIO – 0.2
VIO + 0.2
V
VIO = 3.0 V
VIO – 0.4
VIO + 0.4
V
VOL
Output Low Voltage
IOL = 100 A, VCC = VCC min,
VIO = VIO min
0.1
V
VOH
Output High Voltage
IOH = –100 A, VCC = VCC min,
VIO = VIO min
VIO – 0.1
V
VID
Voltage for Accelerated Program
11.5
12.5
V
VLKO
Low VCC Lock-out Voltage
1.0
1.4
V
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